新型热界面材料-纳米银纸的性能研究-中国材料进展

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Title:: Study of New Thermal Interface Material-Nanosilver Paper

文章编号:: 1674-3962(2025)04-0373-07

作者:: 余翠娟; 叶益聪; 堵永国; 王震; 彭泳潜; 徐元曦; 国防科技大学空天科学学院材料科学与工程系，湖南长沙 410073

Author(s):: YU Cuijuan; YE Yicong; DU Yongguo; WANG Zhen; PENG Yongqian; XU Yuanxi; Department of Materials Science and Engineering, School of Aerospace Science，National University of Defense Technology， Changsha 410073, China

关键词:: 纳米银纸; 新型热界面材料; 湿法造纸; 低温烧结; 宽温域服役; 大功率半导体

Keywords:: nano-silver paper; new thermal interface materials; wet papermaking; lowtemperature sintering; wide-temperature range service; high-power semiconductor

分类号:: TM241;TB383

DOI:: 10.7502/j.issn.1674-3962.202304023

文献标志码:: A

摘要:: 第三代半导体材料具有禁带宽度大、击穿电场高、热导率高等优异性能，满足大功率器件向微型化、高性能、高组装密度、高可靠性方向发展的性能要求，但传统的界面材料已无法满足器件的高散热需求，研究与之匹配的新型热界面材料迫在眉睫。采用湿法造纸技术将均匀分散的银纳米线溶液制备成一种兼具高纯度、高导热和高强度的纳米银纸，研究了纳米银纸热压烧结后的导热性能和与基体的粘接强度，分析了热压烧结后纳米银纸的微观形貌及剪切断口形貌。结果表明，纳米银纸在250 ℃/10 MPa/10 min的条件下热压烧结后，组织致密，孔隙率<5%，热阻≤0.8 mm2·K·W-1，与基体间的室温剪切强度高达39 MPa，400 ℃高温条件下剪切强度高达13 MPa。纳米银纸作为一种新型低温烧结（≤250 ℃）、宽温域服役（常温~800 ℃）的热界面材料，在大功率半导体器件的封装中具有广泛的应用前景。

Abstract:: The third generation semiconductor materials have excellent properties such as wide bandgap, high breakdown electric field and high thermal conductivity, which meet the performance requirements of high-power semiconductor dvices towards miniaturization, high performance, high packing density and high reliability. However, the traditional thermal interface materials can no longer meet the high heat dissipation requirements of the devices, so it is urgent to study a new type of thermal interface materials that matches it. A kind of nano-silver paper with high purity, high thermal conductivity and high strength was prepared from uniformly dispersed silver nanowire solution by wet papermaking technology. The thermal conductivity and shear strength of nanosilver paper after hot-pressing sintering were studied, and the micromorphology and shear fracture morphology of the nanosilver paper after hot-pressing sintering were analyzed. The results show that the nanosilver paper has compact structure at the hot-pressing sintering process of 250 ℃/10 MPa/10 min, porosity is less than 5%, thermal resistance is less than 0.8 mm2·K·W-1, the room temperature shear strength with the substrate is 39 MPa, the shear strength at 400 ℃ is 13 MPa. As the low-temperature sintering (≤250 ℃) and wide-temperature range service (room temperature~800℃) new thermal interface material, nano-silver paper has a wide application prospect in the packaging of high-power semiconductor devices.

中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

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