人工智能驱动集成电路下一代互连材料设计:进展与挑战-中国材料进展

文章信息/Info

作者:: 崔国祥; 李瑞; 袁昌驰; 吴蕴雯; 鞠生宏; 1. 上海交通大学, 材料科学与工程学院, 上海, 200240 2. 上海交通大学, 中英国际低碳学院, 上海, 201306

Keywords:: interconnect materials; binary alloys; topological semimetals; two-dimensional materials; artificial intelligence

摘要:: 随着芯片在科技和日常生活中的重要性增加，新兴应用领域对低功耗和高性能的需求愈加迫切。摩尔定律推动下，集成电路微型化带来量子隧穿效应、布线电阻增加等挑战。工程师通过三维异构集成和堆叠结构改进器件性能，但在纳米尺度下，互连技术成为关键。互连线的RC延迟决定集成电路性能，因此低电阻率材料至关重要。自铜互连取代铝互连以来，尽管在应用中物理性质较优越，但在5 nm节点处缩小尺寸对互连电阻影响显著增加。本文综述后摩尔时代的关键问题，探讨钴、钌等金属互连材料的进展与瓶颈，重点介绍二元合金、拓扑半金属和二维材料的发展前景，并展望人工智能在集成电路互连材料设计方面的应用潜力，为数据驱动的集成电路先进互连材料开发提供思路与借鉴。

Abstract:: As the significance of chips in technology and daily life continues to grow, the demand for low power consumption and high performance in emerging applications becomes increasingly urgent. Under the drive of Moore’s Law, the miniaturization of integrated circuits brings challenges such as quantum tunneling effects and increased wiring resistance. Engineers have improved device performance through three-dimensional heterogeneous integration and stacked structures, but at the nanoscale, interconnect technology becomes critical. The RC delay of interconnects determines the performance of integrated circuits, making low-resistivity materials pivotal. Since the replacement of aluminum interconnects with copper, despite the superior physical properties of copper in applications, the reduction in size at the 5 nm node has significantly increased interconnect resistance. This paper reviews the key issues in the post-Moore era, exploring the progress and limitations of metal interconnect materials such as cobalt and ruthenium. It highlights the development prospects of binary alloys, topological semimetals, and two-dimensional materials, and forecasts the potential of artificial intelligence in materials design, inspiring future research to apply data-driven approaches to the development of next-generation interconnect materials.