二维材料缺陷工程中的写入方法、表征技术与器件性能-中国材料进展

文章信息/Info

Title:: Defect engineering in two-dimensional materials: writing, characterization, and device function

作者:: 王璐璘; 孙越; Kaushik Kannan; Soobin Im; 傅冠中; 王荣明; 张洪洲; 1 都柏林圣三一大学物理学院，爱尔兰都柏林 2 北京科技大学数理学院，中国北京

Author(s):: WANG Lulin; SUN Yue; Kaushik Kannan; Soobin Im; Fu Guanzhong; WANG Rongming; ZHANG Hongzhou; 1 School of Physics, Trinity College Dublin, Dublin 2, Ireland. 2 School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, China.

Keywords:: 2D materials; defect engineering; ion irradiation; plasma processing; 2D metrology; MoS2; graphene

摘要:: 近年来，二维材料的缺陷工程研究取得了显著进展，缺陷引入过程变得更加可控，缺陷表征手段不断提升，同时人们对写入的缺陷如何影响材料及器件性能的理解也不断加深。本文系统综述了多种二维材料缺陷写入方法，包括聚焦离子束、电子束辅助工艺、等离子体处理以及缺陷激活蚀刻，并总结了用于解析缺陷结构与分布的关键表征技术，涵盖拉曼光谱、光致发光光谱、电子显微镜、原子力显微镜、二次电子成像及输运测量。这些研究从结构、化学与电子等多个维度出发，共同构建了对二维材料缺陷工程的综合认知。在此基础上，本文进一步讨论了缺陷对器件性能的影响，主要涵盖电荷输运调控、光响应增强及阻变开关行为。综合现有研究可以看出，器件性能不仅取决于缺陷密度，还与缺陷类型、空间分布以及局部化学环境密切相关。因此，缺陷不再仅被视为导致性能退化的不利因素，而正逐渐成为可被设计、调控和利用的功能单元。总体而言，二维材料领域正从“抑制缺陷”的传统思路，逐步转向“利用缺陷”的设计思路，即通过对缺陷进行精确的写入与调控，实现器件功能的重构。这一认识上的转变为新型电子与光电子器件的发展提供了重要机遇。

Abstract:: Recent progress in defect engineering of two-dimensional materials has enabled increasingly controlled routes for defect introduction, more sensitive approaches to defect characterization, and a clearer understanding of how written defect landscapes influence device behavior. This review discusses methods for defect writing, including focused ion beams, electron-beam-assisted processes, plasma treatment, and defect-activated etching, together with the principal techniques used to resolve the resulting defect landscape,such as Raman and photoluminescence spectroscopy, electron microscopy, atomic force microscopy, secondary-electron imaging, and transport measurements. The effects of these defects on charge transport,photoresponse, resistive switching, and neuromorphic operation are then considered. A consistent conclusion across the literature is that device performance depends not only on defect density, but also on defect type,spatial distribution, and chemical environment. Overall, the field is moving from treating defects primarily as a source of degradation to using them as functional elements in 2D devices.