[1]张宇森,王梓程,张智宏,等.基于形核生长动力学调控的二维晶体原子制造[J].中国材料进展,2026,45(09):050-59.
 ZHANG Yusen,WANG Zicheng,ZHANG Zhihong,et al.Atomic Manufacturing of Two-Dimensional Crystals by Nucleation and Growth Kinetics Modulation[J].MATERIALS CHINA,2026,45(09):050-59.
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基于形核生长动力学调控的二维晶体原子制造()

中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
45
期数:
2026年09
页码:
050-59
栏目:
出版日期:
2026-08-31

文章信息/Info

Title:
Atomic Manufacturing of Two-Dimensional Crystals by Nucleation and Growth Kinetics Modulation
作者:
张宇森王梓程张智宏王荣明
北京科技大学,磁光电复合材料与界面科学北京市重点实验室,新金属材料全国重点实验室,北京 100083
Author(s):
ZHANG YusenWANG ZichengZHANG ZhihongWANG Rongming
Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China
关键词:
二维晶体原子制造形核生长动力学原位表征精准合成
Keywords:
Two-dimensional crystals atomic manufacturing nucleation and growth kinetics in situ characterization precise synthesis
文献标志码:
A
摘要:
二维晶体具有原子级厚度、极高的表面原子占比和无悬挂键的范德华表面,为半导体器件进一步微缩提供了重要的材料基础。面向高度集成、高性能器件,大面积高质量二维单晶仍需实现晶体质量、取向、层数及界面的精准控制,其关键在于深入认识前驱体输运、形核及生长的动力学规律,并据此调控晶体形成路径。本文以“动力学认识—原位验证—精准合成”为主线,首先讨论前驱体表界面动力学、形核路径与临界核演化、形核位置和取向选择机制;随后分析生长限速步骤、边缘原子过程、各向异性生长及层数演化;进一步总结原位表征与理论计算在捕捉中间态、解析动态过程和验证微观机制中的作用;最后评述高质量晶畴与功能原子位点、面内单晶化与纵向结构控制,以及异质结构精准构筑等进展,并展望二维晶体原子制造面临的挑战与发展方向。
Abstract:
Two-dimensional (2D) crystals feature atomic-scale thickness, a high fraction of surface atoms, and dangling-bond-free van der Waals surfaces, providing an important materials platform for further scaling of semiconductor devices. Highly integrated and high-performance devices require precise control over crystal quality, orientation, layer number, and interfaces. Achieving such control requires mechanistic understanding of precursor transport, nucleation, and growth, together with active regulation of crystal formation pathways. Following the framework of “kinetic understanding–in situ validation–precise synthesis,” this review first discusses surface and interface kinetics, nucleation pathways and critical-nucleus evolution, and the selection of nucleation sites and orientations. It then examines rate-limiting growth processes, edge-mediated anisotropic growth, and vertical layer evolution. The complementary roles of in situ characterization and theoretical modeling in identifying intermediates, resolving dynamic processes, and validating microscopic mechanisms are summarized. Finally, recent progress in high-quality domain growth and functional atomic sites, in-plane single crystallization and vertical structure control, and precise heterostructure construction is reviewed,followed by perspectives on the challenges and future development of atomic manufacturing of 2D crystals.
更新日期/Last Update: 2026-07-31