[1]史可文,孙莹*,邓司浩,等.Sn掺杂对Mn3Zn1-xSnxN化合物负热膨胀行为和电输运性能的影响[J].中国材料进展,2015,(7-8):026-30.[doi:10.7502/j.issn.1674-3962.2015.07.07]
　Shi Kewen,Sun Ying*,DengSihao,et al.The effects of Sn doping on the negative thermal expansion and electronic transport properties in Mn3Zn1-xSnxN compounds[J].MATERIALS CHINA,2015,(7-8):026-30.[doi:10.7502/j.issn.1674-3962.2015.07.07]
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Sn掺杂对Mn3Zn1-xSnxN化合物负热膨胀行为和电输运性能的影响()
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中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
期数:
2015年第7-8期
页码:
026-30
栏目:
特约研究论文
出版日期:
2015-08-18

文章信息/Info

Title:
The effects of Sn doping on the negative thermal expansion and electronic transport properties in Mn3Zn1-xSnxN compounds
作者:
史可文; 孙莹*; 邓司浩; 王蕾; 胡鹏伟; 王聪
北京航空航天大学物理系 , 凝聚态物理与材料物理研究中心
Author(s):
Shi Kewen;  Sun Ying*;  DengSihao;  Wang Lei;  HuPengwei;  Wang Cong
Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University
关键词:
负热膨胀' target="_blank" rel="external"> FONT-FAMILY: 宋体">负热膨胀; 相变; 电阻率; 电子 FONT-FAMILY: "; Calibri"; "; sans-serif"; ">- 电子散射' target="_blank" rel="external"> FONT-FAMILY: 宋体">电子散射
DOI:
10.7502/j.issn.1674-3962.2015.07.07
文献标志码:
A
摘要:
采用固相反应法成功制备了Mn3Zn1-xSnxN（x=0.05, 0.1, 0.15，0.2，0.3）系列化合物,研究了Sn替代Zn对Mn3Zn1-xSnxN化合物的热膨胀、熵变和电输运性能的影响。Mn3ZnN化合物在磁相变温区以下具有低热膨胀行为，随着Sn掺杂量的增加，Mn3Zn1-xSnxN系列化合物的低膨胀温区（LTE）逐渐提高到室温以上。同时，低膨胀温区内的线膨胀系数逐渐升高。然而，Sn含量的增加对磁相变附近的负热膨胀行为未产生明显的影响。电阻测量结果表明Mn3Zn1-xSnxN化合物低温（50 K以下）电输运出现反常。随着Sn含量的增加，Mn3Zn1-xSnxN化合物在低温下出现的电阻率极小值现象逐渐减弱，最终在x=0.2处消失。拟合结果表明，该系列化合物中的电子-电子散射逐渐增强，出现明显的费米液体行为。由于丰富的低膨胀性能和独特的电输运性能，该化合物在功能材料领域将具有重要的研究价值和应用前景。
Abstract:
The Mn3Zn1-xSnxN (x=0.05, 0.1, 0.15, 0.2, 0.3) compounds were synthesized by a solid-state reaction method. The effects of Sn doping on the thermal expansion behavior and electronic transport properties were investigated in these compounds. The transition temperature will increase and the difference of the volume do not change as the doping of Sn. When x=0.3, the negative thermal expansion behavior occurs at room temperature indicating that the range of the low thermal expansion (LTE) broadening to room temperature with the coefficient of thermal expansion in this range increasing from 2.35 to 8.66 × 10-6 /K. However, Sn doping can change the electro interaction at low temperature in Mn3Zn1-xSnxN compounds. With increasing Sn content, the multiple unusual minima behavior are disappeared, while the electro-electro interactions are increased to suggest a highly correlated Fermi liquid behavior in x=0.2 and 0.3 compounds. The abundant thermal expansion and electronic transport properties make this serial compounds necessary for the interesting physical mechanism and potential applications.
更新日期/Last Update: 2015-06-29