基于Heusler合金的自旋零能隙半导体及其研究进展-中国材料进展

文章信息/Info

作者:: 徐桂舟1; 徐锋1; 王文洪2; (1南京理工大学,江苏南京 210094)
(2中国科学院物理研究所北京凝聚态物理国家实验室, 北京 100190)

Author(s):: Xu Guizhou; Xu Feng; Wang Wenhong; (1. Nanjing University of Science and Technology, Nanjing 210094, China)
(2. Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China)

Keywords:: Heusler alloys; spin gapless semiconductor; magnetoresistance; half metal; spin injection

摘要:: 自旋零能隙半导体是一类具有接近100%的高自旋极化率，同时与工业半导体具有良好兼容特性的新型自旋电子学材料，在自旋注入、自旋晶体管中具有潜在应用前景。本文从理论计算的电子结构，结合实验的磁性、输运性质能方面对包括Hg2CuTi型，LiMgPdSn四元等比型的Heusler自旋零能隙半导体及其研究进展进行了概述。阐明了Heusler合金中自旋零能隙半导体形成的机制和经验规律，揭示出原子有序、组分调制对自旋零能隙半导体性质的影响。通过对基于Heusler自旋零能隙半导体的自旋注入体系的构建，展望了自旋零能隙半导体的发展趋势和潜在应用。

Abstract:: Spin gapless semiconductors are new class of spintronic materials characterized with nearly fully spin polarization and good compatibilities with the existence semiconductor industry. We reviewed the recent advances of Heusler spin gapless semiconductors, including Hg2CuTi and LiMgPdSn types, from the aspects of first principles calculations and experimental magneto transport properties. We try to illustrate the mechanism and rule guiding for the formation of spin gapless semiconductors in Heulser alloys, and uncover the affect by the atomic order and composition adjust. By constructing the spin injection scheme based on the Heusler spin gapless semiconductor, we give outlook for their development and potential applications.