[1]郭怀新,黄语恒,黄宇龙,等.大功率器件及材料的热特性表征技术研究进展[J].中国材料进展,2018,(12):041-45.[doi:10.7502/j.issn.1674-3962.2018.12.09]
 GUO Huaixin,HUANG Yuheng,HUANG Yulong,et al.Research Progress on the Thermal Characterization Technology of High Power Device and Material[J].MATERIALS CHINA,2018,(12):041-45.[doi:10.7502/j.issn.1674-3962.2018.12.09]
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大功率器件及材料的热特性表征技术研究进展(/HTML)
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中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
期数:
2018年第12期
页码:
041-45
栏目:
出版日期:
2018-12-31

文章信息/Info

Title:
Research Progress on the Thermal Characterization Technology of High Power Device and Material
作者:
郭怀新黄语恒黄宇龙陶鹏孔月婵李忠辉陈堂胜
1. 微波毫米波单片集成和模块电路重点实验室,南京电子器件研究所
2. 金属基复合材料国家重点实验室,材料科学与工程学院
Author(s):
GUO Huaixin HUANG Yuheng HUANG Yulong TAO Peng KONG Yuecan LI Zhonghui CHEN Tangseng
1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute
2. State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University
关键词:
功率器件热管理结温热导率界面热阻
Keywords:
power device thermal management junction temperature thermal conductivity thermal boundary resistance
DOI:
10.7502/j.issn.1674-3962.2018.12.09
文献标志码:
A
摘要:
以氮化镓为代表的第三代半导体高功率密度的发展受限于自身热积累效应引起器件结温升高问题,严重导致器件性能和可靠性的下降,因此,器件的热管理已成为大功率器件研发和应用领域的一个重要研究方向,而器件本身及其材料的热特性表征贯穿于功率器件散热技术开发的整个过程,是评估和指导热管理研发的重要途径。为此,本文对国内外正在开展的器件芯片级热特性表征技术研究进展进行了综述,系统分析了器件结温、外延薄膜热导率、界面热阻等热性能表征技术的优势及局限性,并阐述了对芯片级热管理开发提供的技术指导和面临的技术挑战。
Abstract:
With development toward high power density of the third-generation semiconductor, represented as GaN devices, the performance and reliability of power devices will be degraded seriously, limited by heat accumulation problem which leads to the rise of junction temperature. Thus, the thermal management has become an important area in the research and application of power device, and the thermal characterization of the device and self material, which appears throughout the whole development process of dissipation techniques, is a critical evaluation and direction about thermal management. For this, research progress of foreign advanced thermal characterizations for chip-level heat dissipation technology are reviewed in detail, and the advantages and limitations of thermal characterizations, including junction temperature of device, thermal conductivity of epitaxial film, and thermal boundary resistance, are analyzed systemically. Meanwhile, the technical guidance challenges of those thermal characterizations for chip-level thermal management are expressed.

备注/Memo

备注/Memo:
收稿日期:2018-05-21
基金项目:国家重点研发计划项目(2017YFB0406100)重点实验室基金资助项目(6142803030203);
第一作者:郭怀新,男,1984年生,高级工程师, Email: guohuaixin@163.com
更新日期/Last Update: 2018-11-30