[1]王疆靖,蒋婷婷,田琳,等.电子束辐照对锗锑碲非晶薄膜影响的研究[J].中国材料进展,2019,(02):110-115.[doi:10.7502/j.issn.1674-3962.2019.02.05]
 WANG Jiangjing,JIANG Tingting,TIAN Lin,et al.Effects of Electron Beam Irradiation on Amorphous GeSbTe Film[J].MATERIALS CHINA,2019,(02):110-115.[doi:10.7502/j.issn.1674-3962.2019.02.05]
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电子束辐照对锗锑碲非晶薄膜影响的研究()
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中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
期数:
2019年第02期
页码:
110-115
栏目:
出版日期:
2019-02-28

文章信息/Info

Title:
Effects of Electron Beam Irradiation on Amorphous GeSbTe Film
作者:
王疆靖蒋婷婷田琳张丹利张伟
西安交通大学 金属材料强度国家重点实验室 微纳尺度材料行为研究中心,陕西 西安 710049
Author(s):
WANG Jiangjing JIANG Tingting TIAN Lin ZHANG Danli ZHANG Wei
Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
关键词:
GeSbTe非晶电子束辐照结晶化原位TEM
Keywords:
GeSbTe amorphous electron beam irradiation crystallization insitu TEM
DOI:
10.7502/j.issn.1674-3962.2019.02.05
文献标志码:
A
摘要:
相变存储器是目前最具潜力的新式存储设备之一,其存储性能主要取决于相变材料的结构性能关系,因此结构表征对于相变存储非常重要。透射电子显微镜(TEM)是表征材料形貌、结构的重要手段,但是高能电子束会对材料的结构造成暂时或永久性的影响,这种影响也为表征非晶相变材料带来了极大的挑战,包括已经商业化的GeSbTe合金。利用原位TEM系统地研究了电子束辐照对GeSb2Te4非晶薄膜样品的影响,发现非晶薄膜在较大电子束束流强度下会发生结晶化,而降低束流强度将能够有效保持非晶的稳定性。量化了电子束束流诱发GeSb2Te4非晶薄膜晶化的阈值,给出了电子束流强度和辐照诱导相变时间的关系,为利用TEM研究GeSbTe非晶材料的结构与性能提供了有效的安全界限。
Abstract:
Phasechange memory is a promising candidate for next generation memory devices. The storage performance greatly depends on the structureproperty relation of the core material, chalcogenide phasechange materials (PCMs), which makes the characterization of atomic structure and defects of PCMs crucial to the development of phasechange memory. Transmission electron microscopy (TEM) is a useful techinque for the characterization of the morphology and structure of materials. However, the highenergy electron beams can cause temporary or permanent structural changes in materials. These beam effects in fact post challenges in measuring the structural details of amorphous PCMs, including the commercialized GeSbTe compounds. Here, we carried out a systematic insitu TEM study on amorphous GeSb2Te4 thin films with the focus on electron beam effects. We showed that the amorphous films crystallized quickly if they were subjected to highdensity electron beams, while by reducing the beam intensity, the amorphous phase can be sustained for longer periods. The threshold values of electron beam intensity under given irradiation time were determined quantitively, and a map displaying the relationship of beam intensity and irradiation time was provided. Our work suggests a safe range for TEM investigations of structural details of amorphous GeSbTe materials.

备注/Memo

备注/Memo:
收稿日期:2018-10-30基金项目:国家自然科学基金资助项目(61774123,51621063)第一作者:王疆靖,男,1988年生,博士生通讯作者:张伟,男,1985年生,教授,博士生导师,Email:wzhang0@mail.xjtu.edu.cn
更新日期/Last Update: 2019-01-30