[1]黄佳瑶,尚 林,马淑芳,等.半导体激光器输出功率影响因素的研究进展[J].中国材料进展,2021,40(03):218-224.[doi:10.7502/j.issn.1674-3962.201908013]
 HUANG Jiayao,SHANG Lin,MA Shufang,et al.Research Progress on Impact Factors to Output Power of Semiconductor Laser[J].MATERIALS CHINA,2021,40(03):218-224.[doi:10.7502/j.issn.1674-3962.201908013]
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半导体激光器输出功率影响因素的研究进展()
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中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
40
期数:
2021年第03期
页码:
218-224
栏目:
出版日期:
2021-03-30

文章信息/Info

Title:
Research Progress on Impact Factors to Output Power of Semiconductor Laser
文章编号:
1674-3962(2021)03-0218-07
作者:
黄佳瑶1尚 林1马淑芳1张 帅1刘青明1侯艳艳1孔庆波1许并社12
(1.陕西科技大学 材料原子 · 分子科学研究所,陕西 西安 710021)(2.太原理工大学 新材料界面科学与工程教育部重点实验室,山西 太原 030024)
Author(s):
HUANG Jiayao1SHANG Lin1MA Shufang1ZHANG Shuai1LIU Qingming1 HOU Yanyan1 KONG Qingbo1XU Bingshe12
(1. Institute of Atomic and Molecular Science,Shaanxi University of Science and Technology,Xi’an 710021,China) (2. Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology,Taiyuan 030024,China)
关键词:
大功率半导体激光器输出功率腔面灾变载流子泄漏双光子吸收纵向空间烧孔
Keywords:
high-power semiconductor laser output powercatastrophic optical damage carrier leakage two-photon absorptionlongitudinal spatial hole burning
分类号:
TN248.4
DOI:
10.7502/j.issn.1674-3962.201908013
文献标志码:
A
摘要:
大功率半导体激光器是现代激光加工设备、激光再制造设备、激光医疗、激光显示以及国防设备中重要的关键基础元器件和核心组件,在工业和国防等领域有着广泛的应用。提高半导体激光器的输出功率首先需要确定影响功率输出的因素,然后通过优化外延材料、芯片结构和制备工艺来解决这些问题。因此,对大功率半导体激光器输出功率影响因素的研究具有重要的意义。基于此,主要对限制GaAs基大功率半导体激光器输出功率的因素进行了综述,总结了近几年GaAs基大功率半导体激光器在腔面灾变、载流子泄漏、双光子吸收以及纵向空间烧孔方面的研究进展,这对进一步提高半导体激光器的输出功率、优化半导体激光器的结构设计、改进外延材料的质量以及提高材料的外延技术具有重要意义。
Abstract:
High-power semiconductor lasers are indispensably fundamental and essential components in the fields of equipment for modern laser processing, laser remanufacturing, laser medical treatment, laser displaying and national defense. They have extensive applications in industrial and defense fields. In order to increase the output power of semiconductor lasers, it is necessary to determine the impact factors of output power. Then, the output power improvement might be achieved through optimizing materials, structure and preparation process of semiconductor laser. Therefore, it is of great significance to study the impact factors on output power of semiconductor lasers. In this paper, the limitations for output power improving of GaAs-based high-power semiconductor lasers were reviewed. The research progress on catastrophic optical damage, carrier leakage, two-photon absorption and longitudinal spatial hole burning of GaAs-based high-power semiconductor lasers was summarized. It might accelerate the output power increasement, structural design optimization, materials quality improvement, and epitaxy technology promotion of semiconductor lasers.

备注/Memo

备注/Memo:
收稿日期:2019-08-04  修回日期:2019-12-10 基金项目:国家自然科学基金面上项目(21972103);国家重点研发计划项目(2016YFB0401803);山西省重点研发计划项目(201703D111026)第一作者:黄佳瑶,女,1995年生,硕士研究生通讯作者:许并社,男,1955年生,教授,博士生导师,     Email: xubs@tyut.edu.cn
更新日期/Last Update: 2021-02-26