[1]吴闯文,崔宝山,朱增泰,等.零场下自旋轨道矩驱动垂直磁矩翻转[J].中国材料进展,2021,40(12):972-981.[doi:10.7502/j.issn.1674-3962.202111030]
WU Chuangwen,CUI Baoshan,ZHU Zengtai,et al.Field-Free Perpendicular Magnetization Switching Driven by Spin-Orbit Torque[J].MATERIALS CHINA,2021,40(12):972-981.[doi:10.7502/j.issn.1674-3962.202111030]
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零场下自旋轨道矩驱动垂直磁矩翻转(
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中国材料进展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
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40
- 期数:
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2021年第12期
- 页码:
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972-981
- 栏目:
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- 出版日期:
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2021-12-30
文章信息/Info
- Title:
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Field-Free Perpendicular Magnetization Switching Driven by Spin-Orbit Torque
- 文章编号:
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1674-3962(2021)12-0972-10
- 作者:
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吴闯文1; 2; 崔宝山2; 3; 朱增泰2; 3; 张广宇2; 3; 于国强2; 3; 梁世恒1; 王浩1
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（1．湖北大学物理与电子科学学院，湖北 武汉 430062）（2．松山湖材料实验室，广东 东莞 523808）（3．中国科学院物理研究所，北京 100190）
- Author(s):
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WU Chuangwen1; 2; CUI Baoshan2; 3; ZHU Zengtai2; 3; ZHANG Guangyu2; 3; YU Guoqiang2; 3; LIANG Shiheng1; WANG Hao1
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(1.School of Physics and Electronic Science, Hubei University, Wuhan 430062, China) (2.Songshan Lake Materials Laboratory, Dongguan 523808, China) (3.Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China)
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- 关键词:
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自旋轨道矩; 垂直磁各向异性; 自旋逻辑器件; 低功耗; 零场磁矩翻转
- Keywords:
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spin-orbit torque; perpendicular magnetic anisotropy; spintronic logic devices; low power consumption; field-free magnetization switching
- 分类号:
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O47
- DOI:
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10.7502/j.issn.1674-3962.202111030
- 文献标志码:
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A
- 摘要:
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基于自旋轨道矩效应的全电学驱动磁矩翻转具有写入速度快、耐久性强、使用寿命长、功耗低等优势，在新型自旋电子存储器和逻辑器件中展现出巨大的应用潜力，从而引起了广泛关注。对于传统自旋轨道矩驱动的垂直磁矩翻转，通常需要在平面内施加外部辅助磁场才能得以实现，这不仅增加了额外的功耗，而且使设计电路更加复杂，因此实现零场下自旋轨道矩驱动垂直磁矩翻转就显得尤为重要。涵盖了近年来通过自旋轨道矩实现零场下磁矩翻转的相关进展，其中实现零场磁矩翻转的关键机制主要包括磁性层结构对称性破缺、面内的交换偏置场、电场调控面内的各向异性、亚铁磁中梯度各向异性以及梯度饱和磁化强度等。
- Abstract:
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Spin-orbit torque (SOT)-based all-electric driven magnetization switching with fast writing speed, high endurance, long service life and low-power consumption has attracted much attention for the potential application in next-generation spintronic memories and logic devices. For conventional SOT-driven perpendicular magnetization switching, an external in-plane magnetic field is inevitable to break the symmetry, which is the main obstacle for practical applications due to its requirement of more power consumption and additional complex design circuits. Thus, the realization of field-free perpendicular magnetization switching by SOT is eagerly desired. Here, we reviewed the recent advances in field-free SOT-driven magnetization switching. The correlated mechanisms include symmetry breaking of the magnetic layer structure, in-plane exchange bias field, modulation of the in-plane anisotropy by electric field regulation, gradient anisotropy in ferrimagnets, and gradient saturation magnetization intensity, etc.
备注/Memo
- 备注/Memo:
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收稿日期：2021-11-06 基金项目：广东省基础与应用基础研究基金项目（2020A151510553）；科技部国家重点研发计划项目（2021YFB3601300）；北京市自然科学基金项目（Z190009）；国家自然科学基金项目（11874409，11904088，11904056，52088101）；中国博士后科学基金项目（2020M670499）第一作者：吴闯文，男，1996年生，博士研究生通讯作者：于国强，男，1983年生，研究员，博士生导师 Email：guoqiangyu@iphy.ac.cn 王浩，男，1967年生，教授，博士生导师 Email: nanoguy@126.com
更新日期/Last Update:
2021-11-29