1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute 2. State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University
With development toward high power density of the third-generation semiconductor, represented as GaN devices, the performance and reliability of power devices will be degraded seriously, limited by heat accumulation problem which leads to the rise of junction temperature. Thus, the thermal management has become an important area in the research and application of power device, and the thermal characterization of the device and self material, which appears throughout the whole development process of dissipation techniques, is a critical evaluation and direction about thermal management. For this, research progress of foreign advanced thermal characterizations for chip-level heat dissipation technology are reviewed in detail, and the advantages and limitations of thermal characterizations, including junction temperature of device, thermal conductivity of epitaxial film, and thermal boundary resistance, are analyzed systemically. Meanwhile, the technical guidance challenges of those thermal characterizations for chip-level thermal management are expressed.