1. College of Materials Science and Engineering, Xi’an Shiyou University, Xi’an 710065, China
2. Xi’an Rare Metal Materials Institute Co., Ltd., Xi’an 710016, China
The rare-scattered high-purity indium metal (purity≥6N5) and ultra-high purity indium metal (purity≥7N) are important raw materials for the secondgeneration compound semiconductors, such as indium phosphide and indium arsenide. Vacuum distillation purification technology is one of the key technologies for preparing high-purity and ultra-high purity indium metal. This article focuses on the principle of vacuum distillation and the current research status of vacuum distillation technology for purifying low-purity indium. A systematic review is conducted on the effects of variable factors in the vacuum distillation process, including distillation temperature, system pressure,distillation time, gas flow channel size, charge amount and effective evaporation area, on the purification behavior of low-purity indium, and the optimal composite process for purifying low-purity indium by vacuum distillation technology is summarized. The technical difficulties of low-purity indium vacuum distillation purification are also summarized, so as to provide important references for engineers engaged in the research of vacuum distillation purification of rare-scattered metals.