(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China)
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DOI:
10.7502/j.issn.1674-3962.2012.02.07
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Abstract:
The integration of multifunctional oxide dielectrics possessing spontaneous polarization with GaN semiconductors can put forward a new direction of developing electronic devices with higher performances. However, dielectric oxides and GaN semiconductors are quite different from each other. It will cause many problems when the two kinds of materials are integrated together. Laser molecular beam epitaxy (LMBE) was used to realize epitaxial growth of dielectric films on GaN substrates.