1.School of Physical Science and Electronics, Shanxi Datong University,Datong,037009 china 2.Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education,Taiyuan University of Technology, Taiyuan, 030024, China;3. Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, 030024, China; 4. The College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024,China;
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DOI:
10.7502/j.issn.1674-3962.2015.05.02
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Abstract:
On the basis of a traditional phosphorescent organic light emitting device (PHOLED) with the structure of of ITO / NPB / CBP+Ir ( ppy ) 3 / liF / Al , with CBP ( 4, 4 ’ - N, N ’ - two carbazole biphenyl ) as the host material, Ir (ppy) 3 ( three ( 2 - phenyl pyridine ) Iridium ) as phosphorescent dopant, NPB as a hole transport layer. Where concavo-convex shape was constructed at the NPB/CBP:Ir(ppy)3 interface, the different concave -convex emitting layer phosphorescent device of NPB / CBP+ Ir ( ppy )3interface is studied, and use the current density -voltage -brightness concavo-convex efficiency - voltage curve analysis device interface charge trapping and injected charge dynamics, determine the optimal concavo-convex number of light emitting layer, when the convex number is 3, the maximum current efficiency of this device is 22cd/A, and was 26% higher than traditional structure device.