2494 Abstract
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 Study on Technics of Electroless Copper Plating on SiC Particle(PDF)

MATERIALS CHINA[ISSN:1674-3962/CN:61-1473/TG]

Issue:
2016年第8期
Page:
51-55
Research Field:
研究报告
Publishing date:

Info

Title:
 Study on Technics of Electroless Copper Plating on SiC Particle
Author(s):
 WU Kaixia1 WANG Bo 2
 (1Department of Mechanical Engineering, JinCheng College of Sichuan University, Chengdu 611731,China)
(2Jinan Mei De Casting CO., LTD., Jinan 250400, China)
Keywords:
-
CLC:

PACS:
-
DOI:
10.7502/j.issn.1674-3962.2016.08.11
DocumentCode:

Abstract:
Chemical copper plating is widely applied in the production, but the reagent used in activation technology is toxic and expensive. The paper discussed the influence of the rule of other process conditions of electroless plating on SiC copper plating effect. The optimal process parameters of experiment by analyzing was that electroless copper plating solution temperature was 35 °C, the pH value of the solution was adjusted to 12~13 with sodium hydroxide, the amount of copper sulfate added to 12 g/L, the amount of formaldehyde added to 28 ml/L, sodium potassium tartrate added in an amount of 40 g/L, after a certain time, we will get a good copper plating layer on the silicon carbide surface. By EDS analysis and scanning electron microscopy (SEM) testing, the results show that the surface of the silicon carbide still gets the better copper plating layer without the activation process.

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Last Update: 2016-09-05