（1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China；2. Institute of Electronic and Information Engineering in Dongguan, University of Electronic Science and Technology of China, Dongguan 523808, Guangdong, China)
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DOI:
10.7502/j.issn.1674-3962.2016.09.09
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Abstract:
With the miniaturization of electrical devices, the problem caused by heating effect make increase the thermal conductivity and decrease the interfacial thermal resistance become an critical factor to improve the reliability of thin film devices. So, it is crucial to characterize the thermal properties of thin film devices in electronics industry. Barium Titanate (BTO) is an inorganic compound of the perovskite type with a high dielectric constant, and has been widely used in electronics industry. By developing a 3ω measuring system, the thermal conductivities of BTO samples prepared by polymer assisted deposition on SiO2 thin films were measured. By employing the relation between thermal conductivity and thermal resistance in thin films with different thickness, the BTO’s thermal conductivity is 5.63 W/mK, and the interfacial thermal resistance between BTO and SiO2 is 2.13×10-8 m2W/K.