18676 Abstract
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Synthesis, Properties and Optoelectronic Device Applications of Silicon Nanocrystals
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MATERIALS CHINA[ISSN:1674-3962/CN:61-1473/TG]

Issue:
2018年第07期
Page:
1-5
Research Field:
前沿综述
Publishing date:

Info

Title:
Synthesis, Properties and Optoelectronic Device Applications of Silicon Nanocrystals
Author(s):
NI Zhenyi;PI Xiaodong;YANG Deren
(State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China )
Keywords:
silicon nanocrystals quantum confinement effect surface effect doping effect optoelectronic devices
CLC:

PACS:
-
DOI:
10.7502/j.issn.1674-3962.2018.07.02
DocumentCode:

Abstract:
As one of the nanostructures of the most important elemental semiconductorsilicon, silicon nanocrystals have attracted great research interests given their remarkable optoelectronic properties and environmental friendliness. In the past decades, tremendous work has been carried out to understand the quantum confinement effect, surface effect and doping effect of silicon nanocrystals and to modify the electric and optical properties of silicon nanocrystals for the purpose of applications in printed electronics, siliconbased optoelectronics and biocompatible highperformance optoelectronics. Up to now, typical optoelectronic devices based on silicon nanocrystals including solar cells, lightemitting diodes and photodetectors have been successfully fabricated. The paper summarizes the recent progress obtained on the investigations of the synthesis, properties and optoelectronic device applications of silicon nanocrystals. In addition, we outlook the perspective of silicon nanocrystals with desirable properties for highperformance device applications.


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Last Update: 2018-06-28