National Engineering Research Center of Electromagnetic Radiation Control Materials,University of Electronic Science and Technology of China, Chengdu 611731, China)
Traditional twodimensional materials show great potential application in the field of electronic devices because of its abundant electrooptical properties. Metalatomdoping in transition metal dichalcogenides can not only preserve their unique optical and electronic properties, but also may give rise to new ferromagnetic and ferroelectric properties, which will open a new application field in spintronics, information storage, and transmission. In this paper, we focus on the theoretical and synthesis study of metal elements doped transition metal dichalcogenides, as well as their structure, electronic and magnetic properties. The experimental synthesis methods of metal atomdoped transition metal dichalcogenides are emphatically discussed, in which chemical vapor deposition and chemical vapor transport methods are widely used, and other ways such as solid state reaction and magnetron sputtering method can also be used together with other methods. Finally, the challenges of metalatomdoping in transition metal dichalcogenides and the development of magnetic twodimensional materials are prospected.