As a new wide-bandgap semiconductor, β-Ga2O3 has attracted a lot of attention in recent years. The bandgap of β-Ga2O3 is as large as 4.7 eV, as a new type of ultra-wide bandgap semiconductor, it has the advantages of larger bandgap, higher breakdown field, bigger Baliga FOM, shorter absorption edge and lower cost, compared to the third-generation semiconductors such as SiC and GaN. Therefore, β-Ga2O3 may become a preferred material for high voltage, high power, low loss power devices, and deep UV optoelectronic devices. Furthermore, β-Ga2O3 single crystals could be grown by melt methods with low cost and high growth speed which is beneficial for large-scale applications. In this paper, the main considerations are focused on single crystal growth and technology optimizations. Besides, the crystal processing, properties characterization, photodetectors, power devices are introduced and future developments are discussed.