Spintronic devices utilize and manipulate the spin degree of freedom of electrons with lower energy consumption, higher density, faster response than microelectronic devices, and non-volatile, which are important to develop and make a breakthrough for next generation information devices. This work firstly introduces the fundamentals of spintronic devices like spin polarization, spin injection, spin transport, spin relaxation and spin detections. Then, focusing on recent works on controlling spin using ferroelectricity, the authors review multiferroic tunnel junction, ferroelectricorganic spin valve and ferroelectric controlled spin-orbit coupling, to show the recent advances on ferroelectric-spintronic devices. Because of the interactions among lattice-charge-spin-orbit, ferroelectricspintronic devices have tunability like charge polarizations tuned by an external electric field, spin polarizations tuned by an external magnetic field, and additional interface turnabilities like lattice changes, static electric fields and strains at the interface, which can further be applied in future memories and logic devices.