Perovskite materials have become a research hotspot in the field of photodetection due to their advantages such as high atomic number, tunable bandgap and high carrier mobility. Wafers, as a novel material form distinct from single crystals and thin films, are characterized by solvent-free preparation, low cost, large area and millimeterthick thickness, making them suitable for high-energy photodetection scenarios such as X-ray detection. Based on research progress in perovskite wafer, this article systematically elaborates on the definition and unique value, mainstream preparation techniques, performance characteristics of perovskite wafers, analyzes its core bottlenecks (void defects, insufficient stability), and looks forward to future development directions, providing a reference for the industrialization of perovskite wafer photodetectors.