[1]张大海,李仲平,范锦鹏.热透波材料技术研究进展[J].中国材料进展,2012,(8):001-6.[doi:10.7502/j.issn.1674-3962.2012.08.01]
ZHANG Dahai,LI Zhongping,FAN Jinpeng.Review on the Research of High Temperature Wave Transparent Materials[J].MATERIALS CHINA,2012,(8):001-6.[doi:10.7502/j.issn.1674-3962.2012.08.01]
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热透波材料技术研究进展(
)
中国材料进展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
-
- 期数:
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2012年第8期
- 页码:
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001-6
- 栏目:
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特约研究论文
- 出版日期:
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2012-08-25
文章信息/Info
- Title:
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Review on the Research of High Temperature Wave Transparent Materials
- 作者:
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张大海; 李仲平; 范锦鹏
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(航天材料及工艺研究所 先进功能复合材料科技重点实验室,北京 100076)
- Author(s):
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ZHANG Dahai; LI Zhongping; FAN Jinpeng
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(National Key Laboratory of Advanced Functional Composite Materials, Aerospace Research Institute of Materials & Processing Technology, Beijing 100076, China)
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- 关键词:
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热透波材料; 热电行为; 高温电性能测试; 介电常数; 介电损耗; 热透波行为
- DOI:
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10.7502/j.issn.1674-3962.2012.08.01
- 文献标志码:
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A
- 摘要:
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热透波材料技术是高超声速飞行器实现通讯与精确导航的关键技术,文章从热透波材料体系、热透波材料热电行为和高温电性能测试技术等方面对热透波材料及其相关技术的发展现状进行了简要介绍。在材料体系方面,石英陶瓷及二氧化硅基复合材料是目前应用的主要材料品种,多孔氮化物陶瓷及陶瓷基复合材料是未来发展的重要方向。在热电行为研究方面,对典型氧化物、氮化物、氮氧化物材料热电行为规律及杂质离子对材料热电行为的影响等方面的研究获得重要进展,并获得试验验证。在高温电性能测试方面,近年来突破了1 600 ℃高温宽频测试关键技术,并获得了氧化硅熔融态介电性能实测数据,国外和国内已实现8 MW/m2热透波实时测试。
- Abstract:
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The technique of high temperature wave transparent materials is the key technique for the communication and navigation of hypersonic vehicles. This paper reviews the research and developments of high temperature wave transparent materials and relative fields in recent years, including the material system, the high temperature dielectric properties and the high temperature dielectric parameters measurement. For material system, the quartz ceramics and quartz fiber reinforced composites are the main applicable materials so far; the porous nitride ceramics and composites will be an important development trend in the future. For the high temperature dielectric properties, the important progress and experimental verification have been made on the high temperature dielectric behaviors of typical oxides, nitrides and nitrogen oxide as well as the effects of impurities on dielectric properties. For the high temperature dielectric parameters measurement, the key technique of board band dielectric measurement from room temperature to 1 600 ℃ has been developed recently and the dielectric parameters of fusing silicon oxide have been successfully obtained for the first time. Moreover, the realtime measurements for high temperature wavetransparent properties under the condition of
8 MW/m2heat flux are achieved.
更新日期/Last Update:
2012-09-03