[1]杜小娟,刘晶,董海亮,等.GaN基绿光激光二极管发展现状及趋势[J].中国材料进展,2023,42(07):597-604.[doi:10.7502/j.issn.1674-3962.202108006]
　DU Xiaojuan,LIU Jing,DONG Hailiang,et al.Development Status and Trend of GaN-Based Green Laser Diode[J].MATERIALS CHINA,2023,42(07):597-604.[doi:10.7502/j.issn.1674-3962.202108006]
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GaN基绿光激光二极管发展现状及趋势()
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中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
42
期数:
2023年第07期
页码:
597-604
栏目:
出版日期:
2023-07-31

文章信息/Info

Title:
Development Status and Trend of GaN-Based Green Laser Diode
文章编号:
1674-3962(2023)07-0597-08
作者:
杜小娟1; 刘晶2; 董海亮3; 贾志刚3; 张爱琴4; 梁建1; 许并社3
1. 太原理工大学材料科学与工程学院, 山西 太原 030024 2. 航天科工防御技术研究试验中心, 北京 100854 3. 太原理工大学 新材料界面科学与工程教育部重点实验室, 山西 太原 030024 4. 太原理工大学轻纺工程学院, 山西 太原 030024 5. 陕西科技大学 材料原子·分子科学研究所, 陕西 西安 710021
Author(s):
DU Xiaojuan1;  LIU Jing2;  DONG Hailiang3;  JIA Zhigang3; ZHANG Aiqin4;  LIANG Jian1;  XU Bingshe3
1. School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China 2. Aerospace Science and Technology Defense Technology Research and Experimental Center, Beijing 100854, China 3. Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education,Taiyuan University of Technology, Taiyuan 030024, China 4. College of Textile Engineering, Taiyuan University of Technology, Taiyuan 030024, China
关键词:
GaN基绿光激光二极管; 输出功率; 光束质量; 可靠性; 外延结构
Keywords:
GaN-based green laser diodes;  output power;  beam quality;  reliability;  epitaxial structure
分类号:
TN248.4
DOI:
10.7502/j.issn.1674-3962.202108006
文献标志码:
A
摘要:
由于氮化镓（GaN）基半导体材料在外延生长技术、外延结构设计方面取得了显著的成果，GaN基绿光激光二极管已广泛应用在激光显示、光纤维通讯、生物医疗器件和光数据存储等领域。综述了绿光激光二极管的发展历程及研究现状；重点详述了导致GaN基绿光激光二极管输出功率低、光束质量差及可靠性差等问题的关键因素及解决方法；探讨了绿光波段量子阱的高In组分导致GaN基激光二极管光电性能骤降方面的问题；总结了制备高性能GaN基绿光激光二极管所面临的挑战仍是外延材料质量差、载流子泄漏严重和强极化效应引起的激射效率低等难题。同时，展望了GaN基绿光激光二极管向智能化和模块化方向发展的趋势以及研究重点。
Abstract:
Since the obvious progress of GaN-based semiconductor materials in epitaxial growth and epitaxial structure design, GaN-based green laser diode has been widely used in laser displays, optical fiber communication, biomedical instruments, optical data storage and other fields. The development and research progress of green laser diode were reviewed in this work. The key factors affecting the low output power, poor beam quality and poor reliability of GaN based green laser diodes and their solutions were described in detail. The photoelectric performance droop for GaN-based green laser diode with high In composition in quantum well were discussed. The challenges of achieving high performance green laser diode are poor quality of epitaxied materials, serious carrier leakage and low radiation recombination caused by strong polarization effect were summarized. The research emphasis and the future trend of smarter and more modular of GaN-based green laser diode were prospected.

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备注/Memo

备注/Memo:
收稿日期：2021-08-08修回日期：2022-01-11 基金项目：国家自然科学基金项目（61904120，21972103）；国家重点研发计划项目（2016YFB0401803）；山西省基础研究项目（201901D111111） 第一作者：杜小娟，女，1997年生，硕士 通讯作者：董海亮，男，1984年生，高级实验师，硕士生导师， Email: dhltyut@163.com 梁建，男，1964年生，副教授，硕士生导师， Email:liangj1220@126.com
更新日期/Last Update: 2023-09-08