铁电-自旋电子器件的研究与进展-中国材料进展

文章信息/Info

Author(s):: FANG Mei; GUO Wang; LI Yuquan; XIA Huayan; SONG Kerui; WANG Yutai; GU Ziyang; LI Keming; (School of Physics and Electronics, Central South University, Changsha 410083, China)

Keywords:: spintronic devices; ferroelectric control; magnetoresistance; spin-orbit coupling; spin injection; spin detection

摘要:: 自旋电子器件是操控和利用电子自旋属性的器件，相比微电子器件具有能耗更低、密度更高、响应更快和非易失性等特点，是新一代信息器件发展和取得突破的一个重要方向。基于自旋电子器件的基本原理，如自旋极化、自旋注入、自旋传输、自旋弛豫、自旋探测等，综述了近10年来铁电材料应用于自旋电子器件领域的相关研究工作，主要包括多铁隧道结、铁电有机自旋阀、铁电调控自旋轨道耦合等，论述了自旋电子器件外场调控和多功能化相关的工作进展。由于铁电材料晶格电荷自旋轨道4者之间的相互作用，铁电自旋电子器件可通过外加电场调控电极化率、外加磁场调控自旋极化率以及外加电场调控界面效应（如晶格、界面电场、应力）等，对器件性能进行调制，有望应用于忆阻器、多阻态存储器、逻辑器件等。

Abstract:: Spintronic devices utilize and manipulate the spin degree of freedom of electrons with lower energy consumption, higher density, faster response than microelectronic devices, and non-volatile, which are important to develop and make a breakthrough for next generation information devices. This work firstly introduces the fundamentals of spintronic devices like spin polarization, spin injection, spin transport, spin relaxation and spin detections. Then, focusing on recent works on controlling spin using ferroelectricity, the authors review multiferroic tunnel junction, ferroelectricorganic spin valve and ferroelectric controlled spin-orbit coupling, to show the recent advances on ferroelectric-spintronic devices. Because of the interactions among lattice-charge-spin-orbit, ferroelectricspintronic devices have tunability like charge polarizations tuned by an external electric field, spin polarizations tuned by an external magnetic field, and additional interface turnabilities like lattice changes, static electric fields and strains at the interface, which can further be applied in future memories and logic devices.