共线反铁磁和非共线反铁磁自旋的外场操控-中国材料进展

文章信息/Info

Title:: External-Field Control of Collinear and Noncollinear Antiferromagnetic Spins

Author(s):: YAN Han; QIN Peixin; LIU Zhiqi; (School of Materials Science and Engineering, Beihang University, Beijing 100191, China)

Keywords:: antiferromagnets; spin; electric-field control; piezoelectric stress; spin-orbit torque

摘要:: 当今时代，数字化信息存储总量爆炸式增长,数据存储所消耗的电能越来越多。大数据、云计算、人工智能等信息技术的快速发展，对信息存储器件的性能提出了更高的要求。然而，传统的以铁磁材料为核心的自旋电子学器件表现出了明显的局限性。寻找和研发一种响应速度快、能耗低、集成密度高、抗磁场干扰强的存储材料对促进信息技术的发展和降低能源消耗具有重要的意义。在这一背景下，反铁磁自旋电子学应运而生。根据自旋结构分类，反铁磁材料可以大致分为共线和非共线反铁磁两类。分别阐述了这两类反铁磁材料的自旋操控方法，包括磁场、电流诱导自旋轨道力矩、利用离子液体和压电基片施加电场、静压力等途径，最终实现了反铁磁材料自旋的有效控制以及反常霍尔效应、交换偏置、普通电阻态的可逆调控。此外，还总结对比了铁磁、共线反铁磁与非共线反铁磁材料性质的相似与差异之处，讨论了反铁磁材料在未来自旋电子学存储和运算器件中的应用前景。

Abstract:: Nowadays, it is the information age and the total amount of digital information is explosively increasing. The fast development of big data, cloud computation and artificial intelligence objectively demands more powerful performance of memory devices. However, traditional spintronic devices with ferromagnetic materials show obvious limitations. Therefore, it is of great significance to develop high-speed, low-power, high-density and strong-magnetic-field-insensitive memory devices. Antiferromagnetic spintronics came into being under this background. According to the spin structure, antiferromagnetic materials can be classified into two general classes: collinear antiferromagnets and noncollinear antiferromagnets. This review article summarizes various means to modulating antiferromagnetic spins such as magnetic fields, spinorbit torque induced by an electric current, electric fields applied on the ionic liquid and piezoelectric substrates, and hydrostatic pressure. As a result, the anomalous Hall effect, exchange bias and longitudinal resistance can be manipulated reversibly. Moreover, this review points out the differences and similarities among ferromagnetic materials, collinear and noncollinear antiferromagnetic materials. Finally, the potential of antiferromagnetic materials for future information technology is also discussed.