[1]曾超凡,朱忆雪,杨兆凯,等.电子封装铜互连线多场耦合可靠性及损伤机制的研究进展[J].中国材料进展,2025,44(10):881-892.[doi:10.7502/j.issn.1674-3962.202305024]
　ZENG Chaofan,ZHU Yixue,YANG Zhaokai,et al.Research Progress on the Reliability and Damage Mechanism of Multi Field Coupling in Copper Interconnects for Electronic Packaging[J].MATERIALS CHINA,2025,44(10):881-892.[doi:10.7502/j.issn.1674-3962.202305024]
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电子封装铜互连线多场耦合可靠性及损伤机制的研究进展()

中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
44
期数:
2025年10
页码:
881-892
栏目:
出版日期:
2025-10-30

文章信息/Info

Title:
Research Progress on the Reliability and Damage Mechanism of Multi Field Coupling in Copper Interconnects for Electronic Packaging
文章编号:
1674-3962(2025)10-0881-12
作者:
曾超凡; 朱忆雪; 杨兆凯; 包宏伟; 马飞
西安交通大学 金属材料强度国家重点实验室，陕西 西安 710049
Author(s):
ZENG Chaofan; ZHU Yixue; YANG Zhaokai; BAO Hongwei; MA Fei
State Key Laboratory of Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
关键词:
集成电路; 铜互连线; 电迁移; 扩散阻挡层; 模拟方法
Keywords:
integrated circuit;  copper interconnects;  electromigration;  diffusion barrier layer;  simulation methods
分类号:
TK124;TN405
DOI:
10.7502/j.issn.1674-3962.202305024
文献标志码:
A
摘要:
伴随着集成电路集成度的增加，芯片尺寸不断减小，铜互连线的尺寸也逐渐达到纳米级别，铜互连线在力、热、电多场耦合条件下的电迁移行为是影响小尺寸下其可靠性的重要因素。首先介绍了小尺寸铜互连面临的主要问题，如，电子散射及扩散阻挡层导致的电阻率的增加以及电迁移现象的加剧。其次，探讨了微观结构、宏观尺寸以及制作工艺等方面对铜互连线电迁移行为的影响，这些影响因素显著改变了铜互连线的电迁移行为及寿命；介绍了对铜互连线进行电迁移行为及寿命预测的有限元法、相场法、熵损伤模型等模拟方法。最后，根据目前已知的影响电迁移的因素进一步指出了有望改善铜互连线的电迁移的发展策略以及研究方向，为高性能铜互连材料设计提供重要参考。
Abstract:
With the continuous reduction of integrated circuit chip size, the size of interconnects is gradually approaching the nanoscale, and interconnects have gone through materials from aluminum to copper, and now the metal cobalt that may replace copper. At present, mainstream chips still use copper as interconnection material, and the electromigration behavior under the condition of mechanical, thermal and electrical multi field coupling is an important factor affecting the reliability of small size copper interconnection. The development history of interconnect materials is introduced, and the advantages and disadvantages of aluminum and copper as interconnects are emphatically compared. It is pointed out that metal cobalt has advantages in resistivity and electromigration resistance, and is expected to become a new generation of interconnect materials. Then, the problems faced by small size copper interconnects are introduced, such as the increase of resistivity and electromigration. The influence factors of copper interconnection electromigration in microcosmic, macroscopic and technological aspects are emphatically discussed, and the finite element method, phase field method, entropy damage model, etc. for predicting electromigration are introduced. Finally, the technical problems faced by copper interconnects are further summarized, and the development strategies and research directions that are expected to improve electromigration are pointed out, providing important reference for the design of highperformance copper interconnection materials.

备注/Memo

备注/Memo:
收稿日期：2023-05-30修回日期：2024-04-17 基金项目：国家重点研发计划资助项目（2021YFB3400800）； 国家自然科学基金项目（52271136）；陕西省自然科学基金项目（2021JC-06, 2019TD-020） 第一作者：曾超凡，男，2001年生，硕士研究生 通讯作者：马飞，男，1979年生，教授，博士生导师， Email:mafei@mail.xjtu.edu.cn 包宏伟，男，1988年生，副教授，硕士生导师， Email: baohongwei1988@msn.com
更新日期/Last Update: 2025-11-14