双面高温超导带材研究进展-中国材料进展

文章信息/Info

Author(s):: ZHAO Xiaohui; TAO Bowan; XIONG Jie; LIU Xingzhao; LI Yanrong; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu

摘要:: 介绍了采用反应溅射法制备双面Y2O3双面种子层长带材，通过引入水汽使Y原子在RABiTS基带上氧化成膜，同时有效的避免了基带的氧化。通过对工艺参数的优化，成功制备了高质量的Y2O3种子层，其面内面外半高宽仅为38°和14°，大大改善了金属基带的双轴织构特性，同时薄膜表面粗糙度仅为28 nm。在制备的高质量种子层上采用溅射方法外延生长YSZ阻挡层和CeO2模板层，薄膜表面光滑，并具有良好的均匀性和双面一致性。用双倒筒靶溅射法制备YBCO超导层，采用旋转结合轴向自动进退，改善了薄膜受热不均的现象，获得了高质量的双面高温超导带材。其中短样双面临界电流Ic之和超过了400 A/cmw，同时成功制备了长度超过1米，Ic>210 A/cm-w的双面高温超导带材。

Abstract:: High quality long doublesided Y2O 3 seed layer was prepared with reactive sputtering method. The water vapor was used to form yttrium oxide thin film while avoiding the oxidation of the RABiTS substrate. And high quality Y 2O 3 seed layer was successfully fabricated. The full widths at half maximum of inplane and out of plane rocking curves of the Y 2O3 seed layer were only 38° and 14°, respectively. The texture of the seed layer was much better than that of the metallic substrate. The surface roughness (RMS) is 28 nm. YSZ barrier layer and CeO2 cap layer were sputtered consequently on top of the Y2O3 seed layer. The film surface is smooth and crack free. Both the microstructure and surface morphology of the buffer layer is uniform along the tape length on both sides. YBCO superconducting layer was prepared with inverted cylindrical opposited target sputtering. Using rotation and automatic back and forth movement along the axis, the uniformity of the film is improved. High quality doublesided coated conductors with Ic over 400 A/cmwidth in short sample, and Ic>210 A/cmwidth in 1m long tape were successfully fabricated.