[1]陈静,王一平,杨颖,等.一种低温共烧压电陶瓷的制备[J].中国材料进展,2012,(4):030-33.[doi:10.7502/j.issn.1674-3962.2012.04.04]
　CHEN Jing,WANG Yiping,YANG Ying,et al.Piezoelectric Ceramic Multilayers Prepared by a Low Temperature Co Firing Process[J].MATERIALS CHINA,2012,(4):030-33.[doi:10.7502/j.issn.1674-3962.2012.04.04]
点击复制

一种低温共烧压电陶瓷的制备()
分享到：

中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
期数:
2012年第4期
页码:
030-33
栏目:
特约研究论文
出版日期:
2012-04-25

文章信息/Info

Title:
Piezoelectric Ceramic Multilayers Prepared by a Low Temperature Co Firing Process
作者:
陈静; 王一平; 杨颖; 陈吉; 顾新云
(南京航空航天大学航天工程学院 机械结构力学及控制国家重点实验室，江苏 南京 210016)
Author(s):
CHEN Jing; WANG Yiping; YANG Ying; CHEN Ji; GU Xinyun
 (State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China)
关键词:
低温共烧陶瓷（LTCC）; 压电陶瓷; 多层膜
DOI:
10.7502/j.issn.1674-3962.2012.04.04
文献标志码:
A
摘要:
压电陶瓷多层膜的低温共烧特性及压电性能密切依赖于其成分。采用调节压电材料成分，以0.90Pb(Zr 0 48Ti052)O3 005Pb(Mn 1/3Sb2/3)O3005Pb(Zn1/3Nb2/3)O3四元体系为研究对象，同时添加烧结助剂CuO来实现多层膜的低温烧结。对多层膜的流延、排胶、烧结、极化等工艺进行探索以优化工艺参数,最终获得850℃烧结温度下的高致密度多层压电陶瓷。压电性能的测试表明三层结构的压电多层膜陶瓷表观d33达873pC/N,远高于同成分单层陶瓷306 pC/N的d33值。采用多普勒激光测振仪进行扫频实验，测定了多层陶瓷纵向振动速度的频谱，确定了基于该多层膜压电振子的最优谐振频率。
Abstract:
In this research, piezoelectric ceramic multilayers based on 090Pb(Zr 0 48Ti052)O3005Pb(Mn 1/3Sb2/3)O3 005Pb(Zn1/3 Nb2/3)O3 quaternary system with silver inner electrodes have been successfully prepared. The process of tape casting, sintering, and poling are intensively investigated. The sintering temperature for the multilayers has been lowered to 850 ℃ by using CuO as the additive. High density is obtained in the multilayer structures even at this low sintering temperature. The piezoelectric measurements display that the ceramic with 3 layers presents piezoelectric coefficient d33 of 873pC/N, which is almost linear with the d 33  value of 306 pC/N of the monolayer ceramic. The fabricated ceramic multilayers can be beneficial to the integration of the piezoelectric devices.
更新日期/Last Update: 2012-06-13