[1]李言荣,张万里,刘兴钊,等.集成电子薄膜材料研究进展[J].中国材料进展,2013,(2):045-50.[doi:10.7502/j.issn.1674-3962.2013.02.05]
LI Yanrong,ZHANG Wanli,LIU Xingzhao,et al.Recent Progress on Integrated Electronic Thin Films Materials[J].MATERIALS CHINA,2013,(2):045-50.[doi:10.7502/j.issn.1674-3962.2013.02.05]
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集成电子薄膜材料研究进展(
)
中国材料进展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
-
- 期数:
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2013年第2期
- 页码:
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045-50
- 栏目:
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特约研究论文
- 出版日期:
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2013-03-31
文章信息/Info
- Title:
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Recent Progress on Integrated Electronic Thin Films Materials
- 作者:
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李言荣; 张万里; 刘兴钊; 朱〓俊; 闫裔超
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(电子科技大学 电子薄膜与集成器件国家重点实验室，四川 成都 610054)
- Author(s):
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LI Yanrong; ZHANG Wanli; LIU Xingzhao; ZHU Jun; YAN Yichao
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( State Key Laboratory of Electronic Thin Films and Integrated Devices，University of Electronics Science and Technology of China，Chengdu 610054, China)
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- 关键词:
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薄膜技术; 电子材料; 电子器件
- DOI:
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10.7502/j.issn.1674-3962.2013.02.05
- 文献标志码:
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A
- 摘要:
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首先分析了当前我国电子信息产业的现状，特别是电子材料与元器件行业的状况，结合国际上电子信息技术的发展趋势，阐述了研究集成电子材料的重要意义。文章结合作者的工作主要介绍了介电/GaN集成电子薄膜生长控制与性能研究情况，采用TiO2（诱导层）/MgO（阻挡层）组合缓冲层的方法控制介电/GaN集成薄膜生长取向、界面扩散，保护GaN基半导体材料的性能，降低介电/GaN集成薄膜界面态密度，建立界面可控的相容性生长方法。通过集成结构的设计与加工，研制出介电增强型GaN HEMT器件、高耐压GaN功率器件原型以及一体化集成的微波电容、变容管、压控振荡器、混频器等新型元器件。
- Abstract:
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The significance of electronic materials was discussed in this paper. The status of the electronic materials and device industry status in China and the trend of development in the world was introduced. The studies of growth and properties of dielectric/GaN integrated films by our group were presented. The compatibility growth method was established by using TiO 2/MgO bi layer buffer, in which TiO 2 induces the epitaxial growth and MgO acts as diffusion barrier. It was found that the method can prevent the performance degradation of semiconductor and decrease the interface state density. Various new devices, including enhancementmode GaN HEMT, high off state breakdown voltage GaN HEMT, microwave capacitors, varactors, voltage controlled oscillators and mixers have been developed.
更新日期/Last Update:
2013-02-22