[1]陈席斌,马淑芳,董海亮,等.GaN基薄膜材料对器件光电性能的研究[J].中国材料进展,2015,(5):021-25.[doi:10.7502/j.issn.1674-3962.2015.05.01]
　CHEN Xibin,MA Shufang,DONG Hailiang,et al.Effect of GaN—Based Film Materials on the Performance of Photoelectric Device[J].MATERIALS CHINA,2015,(5):021-25.[doi:10.7502/j.issn.1674-3962.2015.05.01]
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GaN基薄膜材料对器件光电性能的研究()
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中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
期数:
2015年第5期
页码:
021-25
栏目:
特约研究论文
出版日期:
2015-05-31

文章信息/Info

Title:
Effect of GaN—Based Film Materials on the Performance of Photoelectric Device
作者:
陈席斌1; 马淑芳 2; 董海亮1; 梁 建1;  许并社1
1.太原理工大学新材料界面科学与工程教育部重点实验室，山西 太原， 030024 2. 北京工业大学 激光工程研究院，北京 010100
Author(s):
CHEN Xibin1;  MA Shufang1; 2; DONG Hailiang1;  LIANG Jian1;  XU Binshe1
1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024,China 2. Institute of Laser Engineering, Beijing University of Technology, Beijing 010100, China
关键词:
GaN; 正向电压; 发光强度
DOI:
10.7502/j.issn.1674-3962.2015.05.01
文献标志码:
A
摘要:
采用金属有机化学气相沉积方法在蓝宝石衬底上外延生长GaN基材料，设计并优化外延生长条件，探索单层N型GaN(N-GaN)、多量子阱（MQW）、电子阻挡层（P-AlGaN）、P型GaN(P-GaN)材料对发光二极管(LED)器件的光电性能的影响。通过X射线衍射仪（XRD）、电致发光谱(EL) 、光致发光谱（PL）等测试设备对外延片进行表征。结果表明：经优化Si掺N-GaN和垒层（QB），获得较好的（102）、（002）半峰宽，正向电压从4.05 V分别降至3.84 V、3.47 V，发光强度从5.68 mV提高到6.08 mV。然后对P型AlGaN层进行Mg掺杂优化，正向电压下降至3.35 V，发光强度提高到6.14 mV。最后对P-GaN层进行了生长温度及退火温度的优化，结果发现正向电压从3.35 V提高至3.41 V，发光强度提高至6.75 mV左右。全自动探针台在测试电流是20 mA的条件下，对芯片的电压和发光强度进行了测试，电压大致从4.5 V降到3.8 V左右，下降了16％。发光强度大概从110 mcd提高到135 mcd，提高了20％左右。经实验结果与理论综合分析，解释了N-GaN层和QB层Si掺，P-AlGaN 层Mg掺，P-GaN层生长温度及活化温度对正向电压和亮度的影响，从而为高质量GaN薄膜材料外延生长及高性能的LED优化提供了更好的实验指导与理论支持。
Abstract:
The epitaxial growth of GaN-based film materials on the sapphire substrate was processed by metal organic chemical vapor deposition method. The structure of epitaxial wafers was designed and epitaxial growth conditions on single N-type GaN (N-GaN), multiple quantum well (MQW), electron blocking layer (P-AlGaN) and P-type GaN (P-GaN) material were optimized. The epitaxial wafers were characterized by X-ray diffraction (XRD), electroluminescence (EL), photoluminescence (PL). Results show that the optimized Si doped N-GaN and quantum barrier (QB) layer could lead better half peak width of (102), (002), voltage increases from 4.05 V to 3.84 V, 3.47 V, and luminous intensity increases from 5.68 mV to 6.08 mV. Then, Mg doped P-AlGaN layer was optimized, voltage reduces to 3.35 V and luminous intensity increases to 6.14 mV. Finally, The optimization of the growth temperature and annealing temperature on P-GaN layer make voltage increase from 3.35 V to 3.41 V, and luminous intensity increase to 6.75 mV. The voltage and the luminous intensity of chips were tested by automatic probe test under the test current of 20 mA. After optimization, the voltage decreases from 4.5 V to 3.8 V roughly, fell by 16%. Luminous intensity increases from 110 mcd to 135 mcd, increasing by 20% . Then, combining the experimental results and the theories, the influence of the N-GaN layer , Si doped QB layer, Mg doped P-AlGaN layer, and the growth temperature and activation temperature of P-GaN layer on the voltage and brightness were analyzed. These results may provide a better experiment guidance and theoretical support for the growth of high quality GaN epitaxial thin film materials and the optimization of high performance LED device.
更新日期/Last Update: 2015-04-29