[1]李少鹏,谭杰,赵玉强,等.Si掺杂对Mn3Zn0.6Ge0.4N的负热膨胀和磁性能的影响[J].中国材料进展,2015,(7-8):036-40.[doi:10.7502/j.issn.1674-3962.2015.07.05]
　LI Shaopeng,TAN Jie,ZHAO Yuqiang,et al. Effect of Si doping on the negative thermal expansion and magnetic properties of Mn3Zn0.6Ge0.4N[J].MATERIALS CHINA,2015,(7-8):036-40.[doi:10.7502/j.issn.1674-3962.2015.07.05]
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Si掺杂对Mn3Zn0.6Ge0.4N的负热膨胀和磁性能的影响()
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中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
期数:
2015年第7-8期
页码:
036-40
栏目:
特约研究论文
出版日期:
2015-08-18

文章信息/Info

Title:
 Effect of Si doping on the negative thermal expansion and magnetic properties of Mn3Zn0.6Ge0.4N
作者:
李少鹏1; 2; 谭杰1; 赵玉强1; 2; 王维1; 黄荣进1; 李来风1
1 中国科学院理化技术研究所，
2 中国科学院大学
Author(s):
LI Shaopeng1; 2;  TAN Jie1;  ZHAO Yuqiang1; 2;  WANG Wei1;  HUANG Rongjin1;  LI Laifeng1
关键词:
Mn3Zn0.6Ge0.4N; Si掺杂; 放电等离子体烧结; 负热膨胀性能; 磁性能
DOI:
10.7502/j.issn.1674-3962.2015.07.05
文献标志码:
A
摘要:
为了探究Si元素对反钙钛矿材料Mn3Zn0.6Ge0.4N的负热膨胀和磁性能的影响，利用放电等离子体烧结法制备了一系列Si掺杂的Mn3Zn0.6SixGe0.4-xN（x=0、0.1、0.15、0.2）材料。材料的结构通过多晶粉末X射线衍射进行了表征，测试结果表明成功的制备了Mn3Zn0.6SixGe0.4-xN化合物（空间群Pm-3m）。然后，对Mn3Zn0.6SixGe0.4-xN进行了热膨胀性能的测试，发现随着Si掺杂量的增加，样品的负热膨胀温区的起始温度向低温移动，而负热膨胀温区的宽度不变。Mn3Zn0.6SixGe0.4-xN的磁性能由物理性能测试系统（PPMS）进行了测试，结果表明，掺杂Si元素之后，在370K附近的顺磁-反铁磁转变完全消失。这与掺杂Si元素之后，负热膨胀起始温度迅速向低温移动的现象一致，证明负热膨胀现象与磁转变的紧密联系。另外，Si掺杂使Mn3Zn0.6Ge0.4N在低温阶段出现自旋玻璃态现象，同时激发了样品的低温铁磁性。
Abstract:
In order to explore the effect of Si doping on the negative thermal expansion (NTE) and magnetic properties of antiperovskite Mn3Zn0.6Ge0.4N, a series of Si-doping Mn3Zn0.6SixGe0.4-xN（x=0、0.1、0.15、0.2）materials were prepared by spark plasma sintering (SPS). The powder X-ray diffraction measurement was conducted in order to characterize the structures of the products, the results of which manifest that the products have the space group Pm-3m, indicating that the Mn3Zn0.6SixGe0.4-xN（x=0、0.1、0.15、0.2）materials were successfully synthesized. Furthermore, we characterized the thermal expansion property of Mn3Zn0.6SixGe0.4-xN and found that the starting temperature of NTE operation-temperature window shift toward low temperature. However, the width of NTE operation-temperature window was maintained after Si doping. The magnetic properties of Mn3Zn0.6SixGe0.4-xN were also measured by the physical property measurement system (PPMS), which shown that the paramagnetic (PM) to antiferromagnetic (AFM) transition around 370K disappeared after Si doping. This result coincide well with the low-temperature shift of NTE operation-temperature window, demonstrating the close correlations between NTE property and magnetic transition. Additionally, the spin-glass and ferromagnetic states occurred at low temperatures in Mn3Zn0.6Ge0.4N after Si doping.
更新日期/Last Update: 2015-06-29