[1]何 龙,姚 光,潘 泰松,等.3ω法测量钛酸钡薄膜的热导率[J].中国材料进展,2016,(09):041-45.[doi:10.7502/j.issn.1674-3962.2016.09.09]
 HE Long,YAO Guang,PAN Taisong,et al. Measuring the thermal conductivity of Barium Titanate thin films using the three-omega method[J].MATERIALS CHINA,2016,(09):041-45.[doi:10.7502/j.issn.1674-3962.2016.09.09]
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3ω法测量钛酸钡薄膜的热导率
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中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
期数:
2016年第09期
页码:
041-45
栏目:
特约研究论文
出版日期:
2016-09-30

文章信息/Info

Title:
 Measuring the thermal conductivity of Barium Titanate thin films using the three-omega method
作者:
 何 龙1姚 光1 潘 泰松1 高 敏1林 媛12
 (1.电子科技大学 电子薄膜与集成器件国家重点实验室,四川 成都 610054;
2. 东莞电子科技大学电子信息工程研究院, 广东 东莞 523808)
Author(s):
 HE Long1 YAO Guang1 PAN Taisong1 GAO Min1 LIN Yuan12
 (1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Institute of Electronic and Information Engineering in Dongguan, University of Electronic Science and Technology of China, Dongguan 523808, Guangdong, China)
关键词:
 3ω法钛酸钡热导率界面热阻
DOI:
10.7502/j.issn.1674-3962.2016.09.09
文献标志码:
A
摘要:
电子设备小型化带来的热效应问题使得提高薄膜材料热导率和降低薄膜与基底的界面热阻成为提高薄膜器件可靠性的关键因素,因此测量薄膜器件热性能成为了电子工业中愈发重要的课题。钙钛矿结构的钛酸钡作为一种高介电常数材料,在电子工业中被广泛使用。本文通过建立一套3ω法测试系统,测试了使用高分子辅助沉积法在SiO2薄膜上沉积的钛酸钡薄膜样品的热导率,并通过不同厚度薄膜热阻与热导率的关系,计算出钛酸钡薄膜的热导率为5.63 W/mK,钛酸钡与SiO2的界面热阻为2.13×10-8 m2W/K。
Abstract:
With the miniaturization of electrical devices, the problem caused by heating effect make increase the thermal conductivity and decrease the interfacial thermal resistance become an critical factor to improve the reliability of thin film devices. So, it is crucial to characterize the thermal properties of thin film devices in electronics industry. Barium Titanate (BTO) is an inorganic compound of the perovskite type with a high dielectric constant, and has been widely used in electronics industry. By developing a 3ω measuring system, the thermal conductivities of BTO samples prepared by polymer assisted deposition on SiO2 thin films were measured. By employing the relation between thermal conductivity and thermal resistance in thin films with different thickness, the BTO’s thermal conductivity is 5.63 W/mK, and the interfacial thermal resistance between BTO and SiO2 is 2.13×10-8 m2W/K.
更新日期/Last Update: 2016-09-21