阳离子基阻变存储器的研究进展-中国材料进展

文章信息/Info

Author(s):: LIU Qi; LIU Sen; LONG Shibing; LV Hangbing; LIU Ming; Institute of Microelectronics, Chinese Academy of Sciences

Keywords:: nonvolatile memory; resistive switching memory; solidstateelectrolyte; electrochemical effect; conductive filament

摘要:: 基于电荷存储的传统非易失存储技术越来越难以满足大数据时代对海量信息的存储需求，亟需发展基于新材料、新原理的非易失存储技术。基于阳离子电化学效应的阻变存储器具有结构简单、速度快、功耗低、可缩小性好、易于三维集成等优点,被认为是下一代非易失存储器的有力竞争者。然而，器件参数离散性大以及阻变机制不清晰严重阻碍了该类器件的快速发展。近几年，国内外学者通过材料和结构的优化设计显著提高了器件的性能，借助先进的表征技术阐明了器件电阻转变的微观机制，为阳离子基阻变存储器的大规模生产和应用奠定了科学基础。从材料改性、器件结构设计和微观机制表征三个方面综述了阳离子基阻变存储器的研究进展，并对其未来的研究方向和发展趋势进行了展望。

Abstract:: The traditional charge-based nonvolatile memory technology is hardly satisfying to the tremendous storage requirement of mass data information in the big data era. Hence, it is urgent to develop nonvolatile storage technology based on new materials and mechanisms.Resistive Random Access Memory (RRAM), based on electrochemical metallization effect, is considered to be a strong competitor for the next generation nonvolatile memory due to its outstanding performance, including simple structure, fast speed, low power, excellent scalability and three-dimensions integration. However, some disadvantages such as the large dispersion of RRAM parameters and the unclear switching mechanism obstacle the real application of RRAM. Recently, the devices performance has been greatly improved by optimization of RRAM materials and device structure, and the microscopic mechanism of resistive switching has been deeply understood with advanced in-situ characterization techniques. In this review, we sum and discuss the recent research progress of cation-based RRAM from three aspects: material optimization, device structure design and physical mechanism illustration. Finally, we predict and outlook the future research direction and development trend of cation-based RRAM.