[1]米少波,贾春林.像差校正高分辨透射电子显微术及其在表征功能氧化物材料结构及界面中的应用[J].中国材料进展,2017,(7-8):056-70.[doi:10.7502/j.issn.1674-3962.2017.07.10]
 MI Shaobo,JIA Chunlin.Aberration-Corrected High-Resolution Transmission Electron Microscopy and Its Applications in Functional Oxides[J].MATERIALS CHINA,2017,(7-8):056-70.[doi:10.7502/j.issn.1674-3962.2017.07.10]
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像差校正高分辨透射电子显微术及其在表征功能氧化物材料结构及界面中的应用()
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中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
期数:
2017年第7-8期
页码:
056-70
栏目:
前沿综述
出版日期:
2017-08-31

文章信息/Info

Title:
Aberration-Corrected High-Resolution Transmission Electron Microscopy and Its Applications in Functional Oxides
作者:
米少波贾春林
(1. 西安交通大学材料科学与工程学院 金属材料强度国家重点实验,陕西 西安 710049) (2. 西安交通大学微电子学院, 陕西 西安710049) (3. 德国于利希研究中心 ERC电镜中心,德国 于利希 52425)
Author(s):
MI Shaobo JIA Chunlin
(1. State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi‘an Jiaotong University, Xi’an 710049, China) (2. School of Microelectronics, Xian Jiaotong University, Xi‘an 710049, China) (3. Ernst Ruska Center for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, Jülich 52425, Germany)
关键词:
界面显微结构氧化物像差校正高分辨透射电子显微术负球差成像术
Keywords:
interface microstructure oxides aberrationcorrected highresolution transmission electron microscopy negative CS imaging technique
DOI:
10.7502/j.issn.1674-3962.2017.07.10
文献标志码:
A
摘要:
简要介绍基于像差校正高分辨透射电子显微镜的负球差成像技术及其在研究功能氧化物材料原子构型中的应用。在亚埃尺度的空间分辨率下,负球差成像技术不但可以获得高衬度的原子尺度结构像,而且可以在皮米精度测量材料中的原子的相对位移,从而精确表征材料结构、晶格缺陷的细微变化及其对材料性能的影响。负球差成像技术为定量解析材料中包含轻原子(例如,氧)在内的精细结构问题提供了有力的手段。重点介绍了负球差成像技术在表征铁电材料电偶极矩、畴结构及畴壁,氧化物异质界面和三维MgO晶体表面精细结构中的应用。
Abstract:
In the present review paper we introduce an imaging technique based on aberrationcorrected TEM, the negative CS imaging (NCSI) technique, which results in a highcontrast of image in comparison with conventional positive CS imaging (PCSI) technique. The novel NSCI technique has been applied for not only acquiring highcontrast atomicresolution structure images of materials, but also determining the relative shifts of atomic columns with a precision of a few picometres. In addition, the NCSI technique provides experimental basis for quantitative analysis of the fine changes of atoms including light elements (eg oxygen) in oxide materials, eg the electric dipoles, domains and domain walls in oxide ferroelectrics, interfaces in heterostructural multilayer films as well as the 3D shape of a nanoscale MgO crystal.
更新日期/Last Update: 2017-09-07