金属元素掺杂二维过渡族金属硫化物研究进展-中国材料进展

文章信息/Info

Author(s):: ZHANG Mengjie; LI Yanfang; HU Jing; GUO Yueying; PENG Bo; National Engineering Research Center of Electromagnetic Radiation Control Materials,University of Electronic Science and Technology of China, Chengdu 611731, China)

Keywords:: twodimensional materials; transition metal dichalcogenides; metaldoped; theoretical calculations; syntheticmethods

摘要:: 传统二维材料具有丰富的电学、光学特性，在电子器件领域中占据着重要位置。金属元素掺杂二维过渡族金属硫化物不仅可以保持原过渡族金属硫化物所特有的优越性能，还可赋予二维材料特定的铁磁、铁电性能，使其在光学器件、自旋电子学器件以及信息和数据存储等领域得到更广泛的应用。重点介绍了金属元素掺杂过渡族金属硫化物的理论和制备方法，对其结构特性、电子特性以及磁学特性进行了详细讨论，并且着重论述了金属元素掺杂在过渡族金属硫化物中的实验合成方法。其中，化学气相沉积法、化学气相传输法被广泛使用，其他实验方法如固相法、磁控溅射法也可结合运用。最后展望了金属元素掺杂过渡族金属硫化物研究面临的挑战以及未来磁性二维材料的发展方向。

Abstract:: Traditional twodimensional materials show great potential application in the field of electronic devices because of its abundant electrooptical properties. Metalatomdoping in transition metal dichalcogenides can not only preserve their unique optical and electronic properties, but also may give rise to new ferromagnetic and ferroelectric properties, which will open a new application field in spintronics, information storage, and transmission. In this paper, we focus on the theoretical and synthesis study of metal elements doped transition metal dichalcogenides, as well as their structure, electronic and magnetic properties. The experimental synthesis methods of metal atomdoped transition metal dichalcogenides are emphatically discussed, in which chemical vapor deposition and chemical vapor transport methods are widely used, and other ways such as solid state reaction and magnetron sputtering method can also be used together with other methods. Finally, the challenges of metalatomdoping in transition metal dichalcogenides and the development of magnetic twodimensional materials are prospected.