宽禁带半导体氧化镓晶体和器件研究进展-中国材料进展

文章信息/Info

Title:: Research Progress in the Crystal Growth and Devices of Wide-Bandgap β-Ga2O3

Author(s):: Tao Xutang; Mu Wenxiang; Jia Zhitai; (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China)

Keywords:: β-Ga2O3; wide-bandgap semiconductor; single crystal growth; crystal process; ultraviolet detector; Schottky diode

摘要:: β-Ga2O3作为新型宽禁带半导体材料，近年来受到了人们的广泛关注。β-Ga2O3禁带宽度可达4.7 eV，相比于第三代半导体SiC和GaN，具有禁带宽度更大、击穿场强更高、Baliga品质因子更大、吸收截止边更短、生长成本更低的优点，有望成为高压、大功率、低损耗功率器件和深紫外光电子器件的优选材料。此外，β-Ga2O3单晶可以通过熔体法生长，材料制备成本相对较低，有利于大规模应用。重点介绍了β-Ga2O3单晶的生长及工艺优化，然后对晶体加工、性能表征、光电探测及功率器件应用等方面进行了讨论，并展望了β-Ga2O3晶体未来的发展方向。

Abstract:: As a new wide-bandgap semiconductor, β-Ga2O3 has attracted a lot of attention in recent years. The bandgap of β-Ga2O3 is as large as 4.7 eV, as a new type of ultra-wide bandgap semiconductor, it has the advantages of larger bandgap, higher breakdown field, bigger Baliga FOM, shorter absorption edge and lower cost, compared to the third-generation semiconductors such as SiC and GaN. Therefore, β-Ga2O3 may become a preferred material for high voltage, high power, low loss power devices, and deep UV optoelectronic devices. Furthermore, β-Ga2O3 single crystals could be grown by melt methods with low cost and high growth speed which is beneficial for large-scale applications. In this paper, the main considerations are focused on single crystal growth and technology optimizations. Besides, the crystal processing, properties characterization, photodetectors, power devices are introduced and future developments are discussed.