[1]刘青明,尚林,邢茹萍,等.GaN基LED中V形坑缺陷的研究进展[J].中国材料进展,2020,(12):968-973.[doi:10.7502/j.issn.1674-3962.201906042]
 LIU Qingming,SHANG Lin,XING Ruping,et al.Research Progress on V-Shaped Pit Defects of GaN-Based LED[J].MATERIALS CHINA,2020,(12):968-973.[doi:10.7502/j.issn.1674-3962.201906042]
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GaN基LED中V形坑缺陷的研究进展()
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中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
期数:
2020年第12期
页码:
968-973
栏目:
出版日期:
2020-12-30

文章信息/Info

Title:
Research Progress on V-Shaped Pit Defects of GaN-Based LED
文章编号:
1674-3962(2020)12-0968-06
作者:
刘青明1尚林1邢茹萍1侯艳艳1张帅1黄佳瑶1马淑芳1许并社12
(1. 陕西科技大学前沿科学与技术转移研究院 材料原子·分子科学研究所,陕西 西安 710021)(2. 太原理工大学 新材料界面科学与工程教育部重点实验室,山西 太原 030024)
Author(s):
LIU Qingming1 SHANG Lin1 XING Ruping1 HOU Yanyan1 ZHANG Shuai1 HUANG Jiayao1MA Shufang1XU Bingshe12
(1. Institute of Atomic and Molecular Science, Frontier Institute of Science and Technology, Shaanxi University of Science and Technology, Xi’an 710021, China) (2. Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China)
关键词:
氮化镓V形坑缺陷非辐射复合光电性能
Keywords:
GaNV-shaped pit defectsnon-radiative recombinationoptical and electrical property
分类号:
TN311+.5
DOI:
10.7502/j.issn.1674-3962.201906042
文献标志码:
A
摘要:
自低温AlN、GaN形核技术和高温热退火技术实现了外延高质量GaN薄膜和激活p型GaN受主以来,GaN基光电器件得到了迅猛发展。但是,GaN基光电器件依然存在诸多基础性问题,特别是基于异质衬底外延的GaN基LED外延层中的位错密度高达108 cm-2,内量子效率却超过50%。V形坑是GaN基LED外延层中一种常见的倒金字塔缺陷,6个侧面与c面的夹角均为62°。基于V形坑缺陷对LED光电性能影响的研究成果,介绍了V形坑中侧壁量子阱屏蔽位错理论:侧壁量子阱的In含量较低,其势垒高度大于c面量子阱,故在穿透位错周围形成了高势垒,阻挡载流子被非辐射复合中心所捕获。此外,还综述了V形坑缺陷的形成机理、附近区域的发光特性、对LED电学特性的影响以及通过优化V形坑调控LED光电性能的研究。
Abstract:
Based on the low-temperature nucleation technology of AlN and GaN, as well as high-temperature thermal annealing technology, the epitaxial growth of high-quality GaN thin films and the activation of p-GaN acceptor has been realized. Since then, GaN-based optoelectronic devices have a great development. However, there are still some fundamental problems for GaN-based optoelectronic devices. Especially, the internal quantum efficiency of GaN-based LED epitaxially grown on heterogeneous substrates is more than 50% while its dislocation density is as high as 108 cm-2. V-shaped pits in the shape of inverted pyramid are common defects in the epitaxial layer of GaN-based LEDs. There are six side-walls in Vshaped pits, and these side-walls all have the angle of 62° with c-plane. Based on the research results of influence of V-shaped pits on optical and electrical properties of LEDs, the screening dislocation theory induced by sidewall quantum wells (QWs) in V-shaped pits was introduced. Owing to the low In content, the barrier height of sidewall QWs is much higher than that of c-plane QWs. Therefore, a high barrier formed around the threading dislocation, which prevents carriers from being captured by the non-radiative recombination center. Moreover, the formation mechanism, surrounding optical properties of V-shaped pits and its influence on electrical properties of LEDs were also reviewed. Meanwhile, the research on optical and electrical properties of LED controlled by V-shaped pits optimization was discussed.

备注/Memo

备注/Memo:
收稿日期:2019-06-28修回日期:2020-01-06 基金项目:国家重点研发计划项目(2016YFB0401803);山西省重点研发计划项目(201703D111026)第一作者:刘青明,男,1990年生,博士研究生通讯作者:马淑芳,女,1970年生,教授,博士生导师, Email:mashufang@sust.edu.cn
更新日期/Last Update: 2020-11-01