[1]王巍,郭俊宏.新型纳米管状二硫化钼的制备[J].中国材料进展,2021,40(01):069-73.[doi:10.7502/j.issn.1674-3962.201911023]
　WANG Wei,GUO Junhong.Preparation of Novel Nano-Tubular Molybdenum Disulfide[J].MATERIALS CHINA,2021,40(01):069-73.[doi:10.7502/j.issn.1674-3962.201911023]
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新型纳米管状二硫化钼的制备()
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中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
40
期数:
2021年第01期
页码:
069-73
栏目:
出版日期:
2021-01-30

文章信息/Info

Title:
Preparation of Novel Nano-Tubular Molybdenum Disulfide
文章编号:
1674-3962(2021)01-0069-05
作者:
王巍; 郭俊宏
（南京邮电大学电子与光学工程学院，江苏 南京 210000）
Author(s):
WANG Wei;  GUO Junhong
(College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications，Nanjing 210000，China)
关键词:
二维材料; 气相沉积法; 二硫化钼; 纳米管; 形成机理
Keywords:
two-dimensional material;  vapor deposition method;  molybdenum disulfide;  nanotube;  growth mechanism
分类号:
TQ125.1；TB383
DOI:
10.7502/j.issn.1674-3962.201911023
文献标志码:
A
摘要:
二硫化钼（MoS2）作为十分热门的材料，以其独特的物理和化学特性备受关注。纳米MoS2因其具有可调控带隙、巨大的比表面积、丰富的边缘位点及良好的化学稳定性等优异的理化性质，在光电器件、催化、锂离子电池及超级电容器、润滑等领域有巨大的应用价值。介绍了采用化学气相沉积（CVD）法，在氩气保护氛围下，以三氧化钼粉末与硫粉作为反应物，在管式炉中将反应温度保持在750 ℃，在二氧化硅衬底上沉积生长MoS2纳米管，并对其进行SEM、TEM、XRD和Raman等表征和分析。XRD和Raman表征结果显示，样品是（002）取向生长且结晶晶粒大小约为22 nm的体型MoS2。另外根据SEM和TEM照片所显示的微结构，对MoS2纳米管的形成原因和生长过程进行了分析，认为MoS2在生长过程中为了降低结构能而弯曲并堆叠生长，并且在弯曲的纳米片上堆叠生长的纳米片由于层间的范德瓦尔斯力使每层生长方向的角度越来越大，当生长角度达到60°左右时，MoS2开始沿轴向方向垂直堆叠生长，并最终形成单开口的管状结构。这是一种与传统纳米管生长完全不同的生长方式。
Abstract:
As a very popular material, molybdenum disulfide（MoS2） has attracted much attention due to its unique physical and chemical properties. Nano-MoS2 has great application value in optoelectronic devices, catalysis，lithium-ion batteries, supercapacitors, lubrication and other fields because of their excellent physical and chemical properties, such as adjustable band gap, huge specific surface area, abundant edge sites and good chemical stability．This article describes a method for depositing and growing MoS2 nanotubes on a silicon dioxide substrate. It is a chemical vapor deposition (CVD) method in which MoO3 powder and sulfur powder are used as reactants under argon protective gas atmosphere, and the reaction temperature is maintained at 750 ℃ in a tube furnace. The experimental samples are characterized by SEM, TEM, XRD and Raman. XRD and Raman characterization results reveal that the samples are bulk MoS2 with (002) orientation growth and crystal grain size of about 22 nm. In addition, according to the microstructures shown in the SEM and TEM images, the formation mechanism and growth process of MoS2 nanotubes are analyzed. It is considered that MoS2 is bent and stacked to reduce the structural energy during the growth process, and the angle of the growth direction of each layer of nanosheets stacked on the bent nanosheets is larger and larger due to the Van Der Waals force between the layers. When the growth angle reaches about 60°, MoS2 began to stack vertically along the axial direction, and finally formed a single-open tubular structure. This is a completely different growth method compared with traditional nanotube growth.

备注/Memo

备注/Memo:
收稿日期：2019-11-15修回日期：2020-02-27 第一作者：王巍，男，1992年生，硕士研究生通讯作者：郭俊宏，男，1986年生，讲师，硕士生导师， Email：jhguo@njupt.edu.cn
更新日期/Last Update: 2021-03-11