铜铁矿基p-TSO材料的化学合成及其光电器件研究-中国材料进展

文章信息/Info

Title:: Chemical Synthesis and Photoelectric Devices Application of p-TSO Delafossite Materials

作者:: 韩美杰1; 2; 齐小犇3; 张如林3; 陈平1; 刘永慧1; 陈国初1; （1. 上海电机学院电气学院，上海 201306）（2. 华东师范大学物理与电子科学学院，上海 200241）（3. 上海电机学院材料学院，上海 201306）

Author(s):: HAN Meijie1; 2; QI Xiaoben3; ZHANG Rulin3; CHEN Ping1; LIU Yonghui1; CHEN Guochu1; (1. School of Electrical Engineering, Shanghai Dianji University, Shanghai 201306, China) (2. School of Physics and Electronic Science，East China Normal University，Shanghai 200241，China) (3. School of Materials，Shanghai Dianji University，Shanghai 201306，China)

Keywords:: ternary oxide; delafossite materials; p-type wide bandgap semiconductor; chemical synthesis; ultraviolet photodetector; hole transport layer; thin film transistor

摘要:: 铜铁矿基三元氧化物CuMO2是p型的宽禁带半导体材料，具有紫外截止、可见光区和近红外光区高度透明的光学特性和良好的电学性能。主要综述了CuMO2铜铁矿基材料近年来报道较多的溶胶-凝胶、水热合成、静电纺丝以及聚合物辅助沉积4种化学制备方法及其当前的研究现状，详细介绍了CuMO2铜铁矿基的紫外光电探测器、钙钛矿太阳能电池以及薄膜晶体管等光电器件的制备和性能研究。这些研究表明，CuMO2三元氧化物极有望应用于低成本、高效益、稳定性好的光电器件和p型薄膜晶体管中，其性能研究及其器件探索拥有较大的研究潜力。然而现阶段其薄膜制备的合成温度偏高，低维铜铁矿材料的电学性能有待进一步提升。因此，铜铁矿基光电器件的研发与应用是一项挑战与机遇并存的工作。

Abstract:: Ternary oxide delafossite CuMO2 is a p-type wide bandgap semiconductor with excellent optical and electrical properties. The CuMO2 materials have high transparency in the visible and nearinfrared regions, while the properties of ultraviolet-cutoff and good conductivity. The properties and four chemical synthesis methods (sol-gel method, hydrothermal synthesis, electrostatic spinning technology, and polymer-assisted-deposition method) of CuMO2 materials are reviewed in this paper. The research progress and properties of CuMO2 devices applied in the ultraviolet detector, perovskite solar cells, and thin film transistors are introduced in detail. These studies show that the ternary oxide CuMO2 is very promising to be used in low cost, high efficiency, good stability of photoelectric devices and p-type thin film transistors, and its performance research and device exploration have great potential. However, the synthesis temperature of its thin films is high at present. The electrical properties of the lowdimensional delafossite materials need to be further improved. Therefore, the research, development and application of delafossite-based optoelectronic devices is both a challenge and an opportunity.