[1]符锐,冯宗强,黄晓旭.位错三维表征技术[J].中国材料进展,2021,40(06):417-426.[doi:10.7502/j.issn.1674-3962.202103019]
 FU Rui,FENG Zongqiang,HUANG Xiaoxu.ThreeDimensional Characterization Techniques of Dislocations[J].MATERIALS CHINA,2021,40(06):417-426.[doi:10.7502/j.issn.1674-3962.202103019]
点击复制

位错三维表征技术()
分享到:

中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
40
期数:
2021年第06期
页码:
417-426
栏目:
出版日期:
2021-06-30

文章信息/Info

Title:
ThreeDimensional Characterization Techniques of Dislocations
文章编号:
1674-3962(2021)06-0417-10
作者:
符锐1冯宗强123黄晓旭123
(1.重庆大学材料科学与工程学院,重庆 400044)(2.重庆大学 电子显微镜中心,重庆 400044) (3. 重庆大学 轻合金材料教育部国际合作联合实验室,重庆 400044)
Author(s):
FU Rui1 FENG Zongqiang123 HUANG Xiaoxu123
(1. College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China) (2. Electron Microscopy Center, Chongqing University, Chongqing 400044, China) (3. International Joint Laboratory for Light Alloys (MOE), Chongqing University, Chongqing 400044, China)
关键词:
位错三维表征同步辐射X射线电子通道衬度成像透射电子显微镜体视学成像三维位错晶体学
Keywords:
dislocation 3D characterization synchrotron radiation Xray electron channeling contrast imaging TEM stereology imaging tomographic crystallography of dislocations
分类号:
TG113;TG115.21+3
DOI:
10.7502/j.issn.1674-3962.202103019
文献标志码:
A
摘要:
位错的三维表征是准确认识位错特性和行为的基础。综述了基于同步辐射X射线、聚焦离子束电子通道衬度成像系统和透射电子显微镜的位错三维重构方法,重点介绍了基于透射电子显微镜的原子分辨率位错三维重构、体视学原理位错三维重构和系列倾转位错三维重构方法的技术原理和应用实例,对比讨论了上述技术在分辨率、定量表征和参量信息耦合能力方面的优缺点,随后介绍了一种基于透射电子显微镜、可以实现位错几何和晶体学特征参量高精度耦合表征的位错三维定量集成表征技术,并在此基础上总结和展望了未来各类位错三维表征技术的发展趋势和技术特点。
Abstract:
The three-dimensional (3D) characterization of dislocations is the basis for full understanding the characteristics and behaviors of dislocations. In this article, the 3D dislocation characterization techniques based on the synchrotron radiation X-ray, the focused ion beam-electron channeling contrast imaging system and the transmission electron microscopy (TEM) are reviewed, with the emphases on the TEM-based methods such as atomic resolution, stereo pair and tilt-series reconstruction of dislocations. The spatial resolution, capability of quantification and coupling of parameters in all these methods are compared and discussed. A novel TEM-based tomographic crystallography method which can simultaneously, quantitatively and precisely characterize the geometric and crystallographic parameters of 3D dislocation structures is also introduced. Further, the technical trends and characteristics of the 3D dislocation characterization techniques in the future are foreseen and summarized.

备注/Memo

备注/Memo:
收稿日期:2021-03-18修回日期:2021-04-20 基金项目:国家重点研发计划资助项目(2016YFB0700400);国家自然科学基金资助项目(51971045)第一作者:符锐,男,1994年生,博士研究生通讯作者:冯宗强,男,1983年生,副教授,博士生导师, Email:zqfeng@cqu.edu.cn 黄晓旭,男,1963年生,教授,博士生导师, Email:xiaoxuhuang@cqu.edu.cn
更新日期/Last Update: 2021-05-27