金属氧化物半导体的界面结构表征与调控-中国材料进展

文章信息/Info

Title:: Interfacial Structural Characterization and Modulation in Metal Oxide Semiconductors

作者:: 蒋仁辉1; 李佩1; 孟琪1; 李雷2; 赵培丽1; 贾双凤1; 郑赫1; 3; 4; 王建波1; 2; （1. 武汉大学物理科学与技术学院电子显微镜中心人工微结构教育部重点实验室和高等研究院，湖北武汉 430072）（2. 武汉大学科研公共服务条件平台，湖北武汉 430072）（3. 武汉大学苏州研究院，江苏苏州 215123）（4. 武汉大学深圳研究院，广东深圳 518057）

Author(s):: JIANG Renhui1; LI Pei1; MENG Qi1; LI Lei2; ZHAO Peili1; JIA Shuangfeng1; ZHENG He1; 3; 4; WANG Jianbo1; 2; （1. School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-Structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China）（2. Core Facility of Wuhan University, Wuhan 430072, China）（3. Suzhou Institute of Wuhan University, Suzhou 215123, China）（4. Wuhan University Shenzhen Research Institute, Shenzhen 518057, China）

摘要:: 界面对材料的力学、热学、电学、磁学和催化等方面的性能有着十分重要的影响，因此界面的原子结构解析和构建对材料的性能调控具有重要的意义。作者课题组利用透射电子显微技术对金属氧化物的界面原子结构进行表征，利用电场、电子束辐照和应力场诱导结构相变并探讨了相界面调控的可能性：（1）在Na0.36WO3.14样品中发现了旋转畴结构，通过施加电场构建了Na0.36WO3.14相与Na0.48WO3相的复合相界面;（2）从原子尺度揭示了Na0.5WO3.25与NaxWO3相界面的形成过程；（3）阐明了拉伸应力作用下ZnO纳米桥从纤锌矿（WZ）结构到h-MgO结构的可逆相变机理，研究了在压应力作用下，CuO纳米线中由于氧空位迁移引起的Cu3O2相的形核，进一步探讨了Cu3O2与CuO相界面的演变过程。作者基于上述实验结果和近期工作对金属氧化物半导体界面的结构表征和调控进行了综述，希望为金属氧化物半导体的结构和性能调控提供参考。

Abstract:: Interfaces have important effects on the mechanical, thermal, electrical, magnetic, and catalytic properties of materials. Therefore, the analysis of atomic structure of the interface and the study of interface construction are of great significance to control the properties of materials. In this paper, the interfacial atomic structures of metal oxides were characterized by transmission electron microscopy. The phase transitions induced by electric field, electron beam irradiation and mechanical stress were presented, based upon which the possible phase boundary engineering was discussed. (1) The rotational domain structures were found in the Na0.36WO3.14 sample, and the Na0.36WO3.14/Na0.48WO3 phase boundary was created by applying an electric field. (2) The formation process of the Na0.5WO3.25/NaxWO3 interface was revealed at the atomic scale. (3) The reversible phase transformation mechanism from wurtzite (WZ) to h-MgO structure in ZnO nanobridges under tensile stress was elucidated. Additionally, the nucleation of Cu3O2 phase due to the oxygen vacancy migration in CuO nanowires under compressive stress was studied, and the Cu3O2/CuO phase boundary evolution mechanism was further discussed. The authors present this review on the structural characterization and modulation of metal oxide semiconductor interfaces based on the recent work, hoping to provide a reference for the structure and property modulation in metal oxide semiconductors.