β-Ga2O3的变形机理以及单晶衬底的机械加工技术研究进展-中国材料进展

文章信息/Info

Title:: Research Progress in Deformation Mechanism and Machining Technology of β-Ga2O3 Single Crystal Substrates

作者:: 杨冉; 金竹; 马可可; 夏宁; 张辉; 杨德仁; 1．浙江大学硅及先进半导体全国重点实验室，浙江杭州 310027 2．浙江大学材料科学与工程学院，浙江杭州 310027 3．浙江大学杭州国际科创中心,浙江杭州 311200

Author(s):: YANG Ran; JIN Zhu; MA Keke; XIA Ning; ZHANG Hui; YANG Deren; 1. State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China 2. School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China et al.

Keywords:: β-Ga2O3 single crystal; mechanical properties; deformation mechanism; machining technology

摘要:: β-Ga2O3是超宽禁带半导体的代表性材料之一，在电子器件、深紫外光电子器件等方面有广泛的应用前景。β-Ga2O3的力学性能在生长、衬底片加工以及器件制备过程中都有重要的影响。综述了β-Ga2O3低温和高温的变形机理，包括主导塑性变形的位错的滑移系和解理断裂机制的总结分析，旨在全面认识β-Ga2O3的变形行为和机理，为其制备、加工和应用过程中遇到的变形相关问题给出指导；针对β-Ga2O3衬底片的加工过程，对切割、研磨和抛光过程中涉及到的变形机理和工艺探索进行了详细介绍，讨论了加工过程中主要存在的问题以及解决问题的方向。

Abstract:: β-Ga2O3 is one of the ultra-wide band gap semiconductors and has broad prospects in electronic devices and deep ultraviolet electronic devices.Mechanical properties of β-Ga2O3 play an important role in the crystal growth, substrate machining and device fabrication. In this paper, the deformation mechanism of β-Ga2O3 at low and high temperatures are reviewed, including the slip systems of dislocations with dominance of plastic deformation and cleavage fracture mechanism. This review may help fully understanding the deformation behavior and mechanical mechanism of β-Ga2O3, and providing guidance for overcoming the problems related to deformation during β-Ga2O3 growing, machining and application. The removal mechanism and process exploration of β-Ga2O3 substrate machining, including the cutting, grinding and polishing, are introduced in detail. The main problems in the machining process and the solving direction are discussed.