真空蒸馏提纯低纯度铟的影响因素研究进展-中国材料进展

文章信息/Info

Title:: Research Progress of Affecting Factors for the Purification of Low-Purity Indium by Vacuum Distillation

作者:: 王伟豪; 谢剑波; 樊光娆; 郑嘉璐; 1. 西安石油大学材料科学与工程学院，陕西西安 710065 2. 西安稀有金属材料研究院有限公司，陕西西安 710016

Author(s):: WANG Weihao; XIE Jianbo; FAN Guangrao; ZHENG Jialu; 1. College of Materials Science and Engineering, Xi’an Shiyou University, Xi’an 710065, China 2. Xi’an Rare Metal Materials Institute Co., Ltd., Xi’an 710016, China

Keywords:: low-purity indium; vacuum distillation; purification; temperature; pressure

摘要:: 稀散高纯铟金属（纯度≥6N5）及超高纯铟金属（纯度≥7N）是磷化铟、砷化铟等第二代化合物半导体的重要原料。真空蒸馏提纯技术是制备高纯及超高纯铟金属的关键技术之一。围绕真空蒸馏原理，结合当前真空蒸馏技术提纯低纯度铟的研究现状，系统综述了在真空蒸馏过程中蒸馏温度、系统压力、蒸馏时间、气流通道尺寸、装料量、有效蒸发面积等可变因子对低纯度铟提纯的影响规律，分析了各变量对低纯度铟真空提纯效果的影响程度，归纳了真空蒸馏技术提纯低纯度铟的最佳复合工艺，总结了低纯度铟真空蒸馏提纯技术的难点，以期为从事稀散金属真空蒸馏提纯研究的工程人员提供重要参考。。

Abstract:: The rare-scattered high-purity indium metal (purity≥6N5) and ultra-high purity indium metal (purity≥7N) are important raw materials for the secondgeneration compound semiconductors, such as indium phosphide and indium arsenide. Vacuum distillation purification technology is one of the key technologies for preparing high-purity and ultra-high purity indium metal. This article focuses on the principle of vacuum distillation and the current research status of vacuum distillation technology for purifying low-purity indium. A systematic review is conducted on the effects of variable factors in the vacuum distillation process, including distillation temperature, system pressure,distillation time, gas flow channel size, charge amount and effective evaporation area, on the purification behavior of low-purity indium, and the optimal composite process for purifying low-purity indium by vacuum distillation technology is summarized. The technical difficulties of low-purity indium vacuum distillation purification are also summarized, so as to provide important references for engineers engaged in the research of vacuum distillation purification of rare-scattered metals.