[1]陈佳熠,陈启超,李政雄,等.基于硅烯和磷烯的新型纳米电子器件[J].中国材料进展,2018,(06):006-10.
 CHEN Jiayi,CHEN Qichao,LI Zhengxiong,et al.Intriguing Prospects of Silicene and Phosphorene for Innovative 2D Nanoelectronics[J].MATERIALS CHINA,2018,(06):006-10.
点击复制

基于硅烯和磷烯的新型纳米电子器件()
分享到:

中国材料进展[ISSN:1674-3962/CN:61-1473/TG]

卷:
期数:
2018年第06期
页码:
006-10
栏目:
前沿综述
出版日期:
2018-06-30

文章信息/Info

Title:
Intriguing Prospects of Silicene and Phosphorene for Innovative 2D Nanoelectronics
作者:
陈佳熠陈启超李政雄陶立
(东南大学材料科学与工程学院,江苏 南京 211189)
Author(s):
CHEN Jiayi CHEN Qichao LI Zhengxiong TAO Li
(School of Material Science and Engineering,Southeast University, Nanjing 211189, China)
关键词:
二维材料纳米技术柔性电子器件硅烯磷烯石墨烯
Keywords:
2D Materials Nanotechnology Flexible Electronics Silicene Phosphorene Graphene
文献标志码:
A
摘要:
二维层片状材料兼具高机械韧性,可调控带隙与光学透明度,以及高的表面体积比等优越性能,为新型柔性纳米电子器件和传感器的研究提供了广阔的平台。本文介绍两种新兴的单质二维材料:硅烯和磷烯及其器件电学性能和稳定性。硅烯的器件实验研究因空气敏感问题一直停滞不前,而最近的三明治夹层转移与移植法实现了硅烯晶体管的首次亮相。相关实验观测证实了理论预测的狄拉克能带结构,即双极电输运机制。室温静电学表征观测到约100 cm2/Vs的载流子迁移率以及10倍的栅极调制,揭示出单原子层硅通道比石墨烯具有更高的栅极调控能力。VA族的磷烯,拥有较高载流子迁移率和可调控适中直接带隙。即使在塑料基底上仍可达到310-1500 cm2/Vs的高载流子迁移率以及103-105的栅极调制。磷烯结合了石墨烯和过渡金属硫化物两者优点于一身,是目前较理想的二维半导体材料。这些研究进展为新型纳米器件的发展提供了广阔前景。
Abstract:
Two-dimensional (2D) atomic sheets yield collective properties of mechanical flexibility, electrical control, optical transparency and high surface-to-volume ratio, which hold promise for advanced flexible nanoelectronics and sensors. This work explores two newly emerging 2D materials, silicene and phosphorene (the Si and P equivalent to graphene) in terms of their air-stability and device properties. Silicene, IVA family cousin of graphene, is predicted to offer a host of exotic electrical properties depending on its material phase, interface and external fields. Recent effort addressed long-lasting air-stability and portability issues, allowing silicene transistor to make its debut, corroborating theoretically predicted ambipolar transport indicating Dirac band structure. Electrostatic characterization on prototype silicene transistors observed carrier mobility ~100 cm2/V-s and 10× gate modulation at RT. In theory, pristine free-standing silicene may offer intrinsic mobility over 1000 cm2/V-s without non-ideal limiting factors, e.g. phase boundary scattering and electron-phonon coupling. The debut of silicene transistor confirms ambipolar transport behavior in atomically thin Si with greater gate modulation than graphene, indicating potential device reach beyond graphene. On the other hand, phosphorene exhibits high mobility and tunable direct bandgap even on plastic substrates, making it the most suitable contemporary 2D semiconductor that combines the merits of graphene and transitional metal dichalcogenides. Phosphorene, phosphorus analog to graphene, is a contemporary semiconductor promising for 2D nanoelectronics due to its direct bandgap bridging between graphene and transitional metal dichalcogenides. Recent few-layer black phosphorus has demonstrated high carrier mobility 310-1500 cm2/Vs with gate modulation 103-105 on flexible polyimide substrate, sustaining under ex-situ bending test with tensile strain up to 1.5%. This recent progress on silicene and phosphorene represent a renewed opportunity for future nanoscale and flexible devices.
更新日期/Last Update: 2018-05-31