State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu
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Abstract:
High quality long doublesided Y2O 3 seed layer was prepared with reactive sputtering method. The water vapor was used to form yttrium oxide thin film while avoiding the oxidation of the RABiTS substrate. And high quality Y 2O 3 seed layer was successfully fabricated. The full widths at half maximum of inplane and out of plane rocking curves of the Y 2O3 seed layer were only 38° and 14°, respectively. The texture of the seed layer was much better than that of the metallic substrate. The surface roughness (RMS) is 28 nm. YSZ barrier layer and CeO2 cap layer were sputtered consequently on top of the Y2O3 seed layer. The film surface is smooth and crack free. Both the microstructure and surface morphology of the buffer layer is uniform along the tape length on both sides. YBCO superconducting layer was prepared with inverted cylindrical opposited target sputtering. Using rotation and automatic back and forth movement along the axis, the uniformity of the film is improved. High quality doublesided coated conductors with Ic over 400 A/cmwidth in short sample, and Ic>210 A/cmwidth in 1m long tape were successfully fabricated.