（1.School of Materials Science and Engineering, Beihang University, Beijing 100191, China) （2.Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province，Hangzhou Innovation Institute of Beihang University，Hangzhou 310051，China) （3.Research Institute for Frontier Science, Beihang University, Beijing 100191, China)
With the rapid development of microelectronic technology, electronic devices are constantly developing towards high performance, miniaturization, low power consumption and self-power supply. While the device performance and integration level continue to improve, the problem of rapid heat dissipation in small space has become a key bottleneck restricting its development. Thin film thermoelectric device is a kind of semiconductor energy conversion device, which has the advantages of all-solid-state, no noise, maintenance-free and small size. It is suitable for the development trend of electronic devices in the future, and has broad application prospects in the field of self-powered electronic devices with low power consumption and rapid cooling of electronic components with high heat flux density. Bi2Te3-based thermoelectric materials are currently the best thermoelectric materials at room temperature. In this paper, we focus on Bi2Te3-based thermoelectric thin film materials and devices. And the preparation and performance optimization methods of the thin-film thermoelectric materials will be introduced first. Subsequently, the thermoelectric thin film device structure design, fabrication processes and interface optimization approaches will be summarized. At last, the applications of thermoelectric thin film devices in thermoelectric power generation and thermoelectric refrigeration will be reviewed.