碲化铋基热电薄膜与器件研究进展-中国材料进展

文章信息/Info

Title:: Recent Progress of Bi2Te3-Based Thermoelectric Thin Film Materials and Devices

作者:: 胡少雄1; 2; 周曼3; 任超杰3; 张博涵1; 祝薇2; 3; 赵未昀2; 邓元2; 3; （1.北京航空航天大学材料科学与工程学院，北京 100191）（2.北京航空航天大学杭州创新研究院浙江省智能传感材料与芯片集成技术重点实验室，浙江杭州 310051）（3.北京航空航天大学前沿科学技术创新研究院，北京 100191）

Author(s):: HU Shaoxiong1; 2; ZHOU Man3; REN Chaojie3; ZHANG Bohan1; ZHU Wei2; 3; ZHAO WeiYun2; DENG Yuan2; 3; （1.School of Materials Science and Engineering, Beihang University, Beijing 100191, China) （2.Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province，Hangzhou Innovation Institute of Beihang University，Hangzhou 310051，China) （3.Research Institute for Frontier Science, Beihang University, Beijing 100191, China)

Keywords:: Bi2Te3; thin film; thermoelectric materials; thermoelectric device; preparation method; performance optimization

摘要:: 随着微电子技术的快速进步，电子器件不断朝着高性能、微型化、低功耗、自供电的方向发展。在器件性能和集成度不断提高的同时，小空间的快速散热问题成为制约其发展的关键瓶颈之一。热电薄膜器件是一种以热电薄膜材料为核心的半导体能源转换器件，具有全固态、无噪音、免维护、体积小等优点，在高热流密度电子元器件快速散热和低功耗电子器件自供电等领域具有迫切的应用需求和广阔的市场前景。Bi2Te3基热电材料是目前室温条件下性能最好的热电材料，以Bi2Te3基热电薄膜材料与器件为核心，重点介绍了常用热电薄膜材料的制备与性能优化方法，热电薄膜器件的结构设计、制备工艺以及界面优化手段，并对热电薄膜器件在热电发电和热电制冷领域的应用做了简要介绍。

Abstract:: With the rapid development of microelectronic technology, electronic devices are constantly developing towards high performance, miniaturization, low power consumption and self-power supply. While the device performance and integration level continue to improve, the problem of rapid heat dissipation in small space has become a key bottleneck restricting its development. Thin film thermoelectric device is a kind of semiconductor energy conversion device, which has the advantages of all-solid-state, no noise, maintenance-free and small size. It is suitable for the development trend of electronic devices in the future, and has broad application prospects in the field of self-powered electronic devices with low power consumption and rapid cooling of electronic components with high heat flux density. Bi2Te3-based thermoelectric materials are currently the best thermoelectric materials at room temperature. In this paper, we focus on Bi2Te3-based thermoelectric thin film materials and devices. And the preparation and performance optimization methods of the thin-film thermoelectric materials will be introduced first. Subsequently, the thermoelectric thin film device structure design, fabrication processes and interface optimization approaches will be summarized. At last, the applications of thermoelectric thin film devices in thermoelectric power generation and thermoelectric refrigeration will be reviewed.